Operando characterization of conductive filaments during resistive switching in Mott VO2
Vanadium dioxide (VO2) has attracted much attention owing to its metal-insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile switching functioning as synapse in this oxide remain not understood. In this work, we use in situ transmission electron microscopy, electrical transport measurements, and numerical simulations on Au/VO2/Ge vertical devices to study the electroforming process. We have observed the formation of V5O9 conductive filaments with a pronounced metal-insulator transition and that vacancy diffusion can erase the filament, allowing for the system to "forget." Thus, both volatile and nonvolatile switching can be achieved in VO2, useful to emulate neuronal and synaptic behaviors, respectively. Our systematic operando study of the filament provides a more comprehensive understanding of resistive switching, key in the development of resistive switching-based neuromorphic computing.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2021 |
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| Erschienen: |
2021 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:118 |
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| Enthalten in: |
Proceedings of the National Academy of Sciences of the United States of America - 118(2021), 9 vom: 02. März |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Cheng, Shaobo [VerfasserIn] |
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| Links: |
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| Themen: |
Conductive filament |
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| Anmerkungen: |
Date Completed 29.07.2021 Date Revised 24.08.2021 published: Print Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1073/pnas.2013676118 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM321811224 |
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| 500 | |a Date Revised 24.08.2021 | ||
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| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Vanadium dioxide (VO2) has attracted much attention owing to its metal-insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile switching functioning as synapse in this oxide remain not understood. In this work, we use in situ transmission electron microscopy, electrical transport measurements, and numerical simulations on Au/VO2/Ge vertical devices to study the electroforming process. We have observed the formation of V5O9 conductive filaments with a pronounced metal-insulator transition and that vacancy diffusion can erase the filament, allowing for the system to "forget." Thus, both volatile and nonvolatile switching can be achieved in VO2, useful to emulate neuronal and synaptic behaviors, respectively. Our systematic operando study of the filament provides a more comprehensive understanding of resistive switching, key in the development of resistive switching-based neuromorphic computing | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a Research Support, U.S. Gov't, Non-P.H.S. | |
| 650 | 4 | |a conductive filament | |
| 650 | 4 | |a neuromorphic computing | |
| 650 | 4 | |a nonvolatile switching | |
| 650 | 4 | |a transmission electron microscopy | |
| 700 | 1 | |a Lee, Min-Han |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Xing |e verfasserin |4 aut | |
| 700 | 1 | |a Fratino, Lorenzo |e verfasserin |4 aut | |
| 700 | 1 | |a Tesler, Federico |e verfasserin |4 aut | |
| 700 | 1 | |a Han, Myung-Geun |e verfasserin |4 aut | |
| 700 | 1 | |a Del Valle, Javier |e verfasserin |4 aut | |
| 700 | 1 | |a Dynes, R C |e verfasserin |4 aut | |
| 700 | 1 | |a Rozenberg, Marcelo J |e verfasserin |4 aut | |
| 700 | 1 | |a Schuller, Ivan K |e verfasserin |4 aut | |
| 700 | 1 | |a Zhu, Yimei |e verfasserin |4 aut | |
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