Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3-xClx Perovskite for RRAM Application
Halide perovskite (HP) materials are actively researched for resistive switching (RS) memory devices due to their current-voltage hysteresis along with low-temperature processability, superior charge mobility, and simple fabrication. In this study, all-inorganic RbPbI3 perovskite has been doped with Cl in the halide site and incorporated as a switching media in the Ag/RbPbI3-xClx/ITO structure, since pure RbPbI3 is nonswitchable. Five compositions of the RbPbI3-xClx (x = 0, 0.3, 0.6, 0.9, and 1.2) films are fabricated, and the conductivity was found to be increasing upon increase in Cl concentration, as revealed by dielectric and I-V measurements. The device with a 20% chloride-substituted film exhibits a higher on/off ratio, extended endurance, long retention, and high-density storage ability. Finally, a plausible explanation of the switching mechanism from iodine vacancy-mediated growth of conducting filaments (CFs) is provided using conductive atomic force microscopy (c-AFM). The c-AFM measurements reveal that pure RbPbI3 is insulating in nature, whereas Cl-doped films demonstrate resistive switching behavior.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:12 |
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| Enthalten in: |
ACS applied materials & interfaces - 12(2020), 37 vom: 16. Sept., Seite 41718-41727 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Das, Ujjal [VerfasserIn] |
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| Links: |
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| Themen: |
Conducting filaments |
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| Anmerkungen: |
Date Revised 17.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acsami.0c10123 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM314045694 |
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| 520 | |a Halide perovskite (HP) materials are actively researched for resistive switching (RS) memory devices due to their current-voltage hysteresis along with low-temperature processability, superior charge mobility, and simple fabrication. In this study, all-inorganic RbPbI3 perovskite has been doped with Cl in the halide site and incorporated as a switching media in the Ag/RbPbI3-xClx/ITO structure, since pure RbPbI3 is nonswitchable. Five compositions of the RbPbI3-xClx (x = 0, 0.3, 0.6, 0.9, and 1.2) films are fabricated, and the conductivity was found to be increasing upon increase in Cl concentration, as revealed by dielectric and I-V measurements. The device with a 20% chloride-substituted film exhibits a higher on/off ratio, extended endurance, long retention, and high-density storage ability. Finally, a plausible explanation of the switching mechanism from iodine vacancy-mediated growth of conducting filaments (CFs) is provided using conductive atomic force microscopy (c-AFM). The c-AFM measurements reveal that pure RbPbI3 is insulating in nature, whereas Cl-doped films demonstrate resistive switching behavior | ||
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| 650 | 4 | |a perovskite | |
| 650 | 4 | |a resistive switching | |
| 650 | 4 | |a vacancy | |
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| 700 | 1 | |a Pattanayak, Soumya |e verfasserin |4 aut | |
| 700 | 1 | |a Kanjilal, Aloke |e verfasserin |4 aut | |
| 700 | 1 | |a Bhattacharjee, Snigdha |e verfasserin |4 aut | |
| 700 | 1 | |a Sarkar, Pranab |e verfasserin |4 aut | |
| 700 | 1 | |a Roy, Asim |e verfasserin |4 aut | |
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