Chemical vapor deposition of layered two-dimensional MoSi2N4 materials
Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works..
Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4 This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap ~1.94 electron volts), high strength (~66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:369 |
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| Enthalten in: |
Science (New York, N.Y.) - 369(2020), 6504 vom: 07. Aug., Seite 670-674 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Hong, Yi-Lun [VerfasserIn] |
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| Anmerkungen: |
Date Completed 21.10.2020 Date Revised 21.10.2020 published: Print Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1126/science.abb7023 |
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| PPN (Katalog-ID): |
NLM313391106 |
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| 500 | |a Date Revised 21.10.2020 | ||
| 500 | |a published: Print | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. | ||
| 520 | |a Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4 This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap ~1.94 electron volts), high strength (~66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a Research Support, Non-U.S. Gov't | |
| 700 | 1 | |a Liu, Zhibo |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Lei |e verfasserin |4 aut | |
| 700 | 1 | |a Zhou, Tianya |e verfasserin |4 aut | |
| 700 | 1 | |a Ma, Wei |e verfasserin |4 aut | |
| 700 | 1 | |a Xu, Chuan |e verfasserin |4 aut | |
| 700 | 1 | |a Feng, Shun |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Long |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Mao-Lin |e verfasserin |4 aut | |
| 700 | 1 | |a Sun, Dong-Ming |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Xing-Qiu |e verfasserin |4 aut | |
| 700 | 1 | |a Cheng, Hui-Ming |e verfasserin |4 aut | |
| 700 | 1 | |a Ren, Wencai |e verfasserin |4 aut | |
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