Synthesis of Atomically Thin Hexagonal Diamond with Compression
Atomically thin diamond, also called diamane, is a two-dimensional carbon allotrope and has attracted considerable scientific interest because of its potential physical properties. However, the successful synthesis of a pristine diamane has up until now not been achieved. We demonstrate the realization of a pristine diamane through diamondization of mechanically exfoliated few-layer graphene via compression. Resistance, optical absorption, and X-ray diffraction measurements reveal that hexagonal diamane (h-diamane) with a bandgap of 2.8 ± 0.3 eV forms by compressing trilayer and thicker graphene to above 20 GPa at room temperature and can be preserved upon decompression to ∼1.0 GPa. Theoretical calculations indicate that a (-2110)-oriented h-diamane is energetically stable and has a lower enthalpy than its few-layer graphene precursor above the transition pressure. Compared to gapless graphene, semiconducting h-diamane offers exciting possibilities for carbon-based electronic devices.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:20 |
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| Enthalten in: |
Nano letters - 20(2020), 8 vom: 12. Aug., Seite 5916-5921 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Ke, Feng [VerfasserIn] |
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| Links: |
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| Themen: |
Atomically thin diamond |
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| Anmerkungen: |
Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acs.nanolett.0c01872 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM311574246 |
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| 520 | |a Atomically thin diamond, also called diamane, is a two-dimensional carbon allotrope and has attracted considerable scientific interest because of its potential physical properties. However, the successful synthesis of a pristine diamane has up until now not been achieved. We demonstrate the realization of a pristine diamane through diamondization of mechanically exfoliated few-layer graphene via compression. Resistance, optical absorption, and X-ray diffraction measurements reveal that hexagonal diamane (h-diamane) with a bandgap of 2.8 ± 0.3 eV forms by compressing trilayer and thicker graphene to above 20 GPa at room temperature and can be preserved upon decompression to ∼1.0 GPa. Theoretical calculations indicate that a (-2110)-oriented h-diamane is energetically stable and has a lower enthalpy than its few-layer graphene precursor above the transition pressure. Compared to gapless graphene, semiconducting h-diamane offers exciting possibilities for carbon-based electronic devices | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a Atomically thin diamond | |
| 650 | 4 | |a Bandgap | |
| 650 | 4 | |a Electrical transport | |
| 650 | 4 | |a Few-layer graphene | |
| 650 | 4 | |a Pressure | |
| 700 | 1 | |a Zhang, Lingkong |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Yabin |e verfasserin |4 aut | |
| 700 | 1 | |a Yin, Ketao |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Chenxu |e verfasserin |4 aut | |
| 700 | 1 | |a Tzeng, Yan-Kai |e verfasserin |4 aut | |
| 700 | 1 | |a Lin, Yu |e verfasserin |4 aut | |
| 700 | 1 | |a Dong, Hongliang |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Zhenxian |e verfasserin |4 aut | |
| 700 | 1 | |a Tse, John S |e verfasserin |4 aut | |
| 700 | 1 | |a Mao, Wendy L |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Junqiao |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Bin |e verfasserin |4 aut | |
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