Multi-Bit Biomemory Based on Chitosan : Graphene Oxide Nanocomposite with Wrinkled Surface
Chitosan (CS) is one of the commonly affluent polysaccharides that are attractive biomaterials as they are easily found in different organisms and are biocompatible. An environment-friendly multi-bit biomemory was successfully achieved on the basis of CS as a favorable candidate for resistive-switching memory applications. By incorporating graphene oxide (GO) into CS, the multi-bit biomemory device (indium tin oxide (ITO)/CS:GO/Ni) was obtained through the solution-processable method, which had a high current ratio among a high, intermediate, and low resistance state as well as a low SET/RESET voltage. GO acting as trapping sites in the active layer might be responsible for the biomemory mechanism. This research opens up a new avenue towards renewable and environmentally benign CS-based materials for biodegradable electronic devices.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:11 |
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| Enthalten in: |
Micromachines - 11(2020), 6 vom: 10. Juni |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Li, Lei [VerfasserIn] |
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| Links: |
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| Themen: |
CS:GO nanocomposites |
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| Anmerkungen: |
Date Revised 28.09.2020 published: Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.3390/mi11060580 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| 520 | |a Chitosan (CS) is one of the commonly affluent polysaccharides that are attractive biomaterials as they are easily found in different organisms and are biocompatible. An environment-friendly multi-bit biomemory was successfully achieved on the basis of CS as a favorable candidate for resistive-switching memory applications. By incorporating graphene oxide (GO) into CS, the multi-bit biomemory device (indium tin oxide (ITO)/CS:GO/Ni) was obtained through the solution-processable method, which had a high current ratio among a high, intermediate, and low resistance state as well as a low SET/RESET voltage. GO acting as trapping sites in the active layer might be responsible for the biomemory mechanism. This research opens up a new avenue towards renewable and environmentally benign CS-based materials for biodegradable electronic devices | ||
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