Effect of functional groups on microporous polymer based resistance switching memory devices
Here, two large-area microporous polymer (MP) films with different substituents were synthesized at the solution/air interface. The on/off ratios of the MP-based memristors differ by an order of magnitude and the turn-on voltages differ by about 0.2 V, which is mainly attributed to the difference in band gap and pore environment of the materials.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:56 |
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| Enthalten in: |
Chemical communications (Cambridge, England) - 56(2020), 47 vom: 14. Juni, Seite 6356-6359 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Song, Yaru [VerfasserIn] |
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| Links: |
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| Themen: |
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| Anmerkungen: |
Date Revised 11.06.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1039/d0cc01397h |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM309732115 |
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| 520 | |a Here, two large-area microporous polymer (MP) films with different substituents were synthesized at the solution/air interface. The on/off ratios of the MP-based memristors differ by an order of magnitude and the turn-on voltages differ by about 0.2 V, which is mainly attributed to the difference in band gap and pore environment of the materials | ||
| 650 | 4 | |a Journal Article | |
| 700 | 1 | |a Liu, Jie |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Wanhui |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Lei |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, Ling |e verfasserin |4 aut | |
| 700 | 1 | |a Lei, Shengbin |e verfasserin |4 aut | |
| 700 | 1 | |a Hu, Wenping |e verfasserin |4 aut | |
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