Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector
GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with an extended cutoff wavelength. However, the traditional GeSn/Ge heterostructure usually consists of defects like misfit dislocations due to the lattice mismatch issue. The defects with the large feature size of a photodetector fabricated on bulk GeSn/Ge heterostructures induce a considerable dark current. Here, we demonstrate a flexible GeSn/Ge dual-nanowire (NW) structure, in which the strain relaxation is achieved by the elastic deformation without introducing defects, and the feature dimension is naturally at the nanoscale. A photodetector with a low dark current can be built on a GeSn/Ge dual-NW, which exhibits an extended detection wavelength beyond 2 μm and enhanced responsivity compared to the Ge NW. Moreover, the dark current can be further suppressed by the depletion effect from the ferroelectric polymer side gate. Our work suggests the flexible GeSn/Ge dual-NW may open an avenue for Si-compatible optoelectronic circuits operating in the short-wavelength infrared range.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:20 |
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| Enthalten in: |
Nano letters - 20(2020), 5 vom: 13. Mai, Seite 3872-3879 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Yang, Yuekun [VerfasserIn] |
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| Links: |
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| Themen: |
Ferroelectrical polymer |
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| Anmerkungen: |
Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acs.nanolett.0c01039 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM30878135X |
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| LEADER | 01000naa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM30878135X | ||
| 003 | DE-627 | ||
| 005 | 20231225132458.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 231225s2020 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1021/acs.nanolett.0c01039 |2 doi | |
| 028 | 5 | 2 | |a pubmed24n1029.xml |
| 035 | |a (DE-627)NLM30878135X | ||
| 035 | |a (NLM)32293186 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Yang, Yuekun |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector |
| 264 | 1 | |c 2020 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Revised 30.09.2020 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with an extended cutoff wavelength. However, the traditional GeSn/Ge heterostructure usually consists of defects like misfit dislocations due to the lattice mismatch issue. The defects with the large feature size of a photodetector fabricated on bulk GeSn/Ge heterostructures induce a considerable dark current. Here, we demonstrate a flexible GeSn/Ge dual-nanowire (NW) structure, in which the strain relaxation is achieved by the elastic deformation without introducing defects, and the feature dimension is naturally at the nanoscale. A photodetector with a low dark current can be built on a GeSn/Ge dual-NW, which exhibits an extended detection wavelength beyond 2 μm and enhanced responsivity compared to the Ge NW. Moreover, the dark current can be further suppressed by the depletion effect from the ferroelectric polymer side gate. Our work suggests the flexible GeSn/Ge dual-NW may open an avenue for Si-compatible optoelectronic circuits operating in the short-wavelength infrared range | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a Ferroelectrical polymer | |
| 650 | 4 | |a Germanium−tin | |
| 650 | 4 | |a Molecular beam epitaxy (MBE) | |
| 650 | 4 | |a Nanowire | |
| 650 | 4 | |a Photodetector | |
| 650 | 4 | |a Side-gated | |
| 700 | 1 | |a Wang, Xudong |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Chen |e verfasserin |4 aut | |
| 700 | 1 | |a Song, Yuxin |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Miao |e verfasserin |4 aut | |
| 700 | 1 | |a Xue, Zhongying |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Shumin |e verfasserin |4 aut | |
| 700 | 1 | |a Zhu, Zhongyunshen |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Guanyu |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Panlin |e verfasserin |4 aut | |
| 700 | 1 | |a Dong, Linxi |e verfasserin |4 aut | |
| 700 | 1 | |a Mei, Yongfeng |e verfasserin |4 aut | |
| 700 | 1 | |a Chu, Paul K |e verfasserin |4 aut | |
| 700 | 1 | |a Hu, Weida |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Jianlu |e verfasserin |4 aut | |
| 700 | 1 | |a Di, Zengfeng |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Nano letters |d 2001 |g 20(2020), 5 vom: 13. Mai, Seite 3872-3879 |w (DE-627)NLM154096849 |x 1530-6992 |7 nnns |
| 773 | 1 | 8 | |g volume:20 |g year:2020 |g number:5 |g day:13 |g month:05 |g pages:3872-3879 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1021/acs.nanolett.0c01039 |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 20 |j 2020 |e 5 |b 13 |c 05 |h 3872-3879 | ||