Three-dimensional a-Si/a-Ge radial heterojunction near-infrared photovoltaic detector
In this work, three-dimensional (3D) radial heterojunction photodetectors (PD) were constructed over vertical crystalline Si nanowires (SiNWs), with stacked hydrogenated amorphous germanium (a-Ge:H)/a-Si:H thin film layer as absorbers. The hetero absorber layer is designed to benefit from the type-II band alignment at the a-Ge/a-Si hetero-interface, which could help to enable an automated photo-carrier separation without exterior power supply. By inserting a carefully controlled a-Si passivation layer between the a-Ge:H layer and the p-type SiNWs, we demonstrate first a convenient fabrication of a new hetero a-Ge/a-Si structure operating as self-powered photodetectors (PD) in the near-infrared (NIR) range up to 900 nm, indicating a potential to serve as low cost, flexible and high performance radial junction sensing units for NIR imaging and PD applications.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2019 |
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| Erschienen: |
2019 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:9 |
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| Enthalten in: |
Scientific reports - 9(2019), 1 vom: 24. Dez., Seite 19752 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Sun, Xiaolin [VerfasserIn] |
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| Links: |
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| Anmerkungen: |
Date Revised 27.10.2023 published: Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1038/s41598-019-56374-2 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM304751677 |
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| 520 | |a In this work, three-dimensional (3D) radial heterojunction photodetectors (PD) were constructed over vertical crystalline Si nanowires (SiNWs), with stacked hydrogenated amorphous germanium (a-Ge:H)/a-Si:H thin film layer as absorbers. The hetero absorber layer is designed to benefit from the type-II band alignment at the a-Ge/a-Si hetero-interface, which could help to enable an automated photo-carrier separation without exterior power supply. By inserting a carefully controlled a-Si passivation layer between the a-Ge:H layer and the p-type SiNWs, we demonstrate first a convenient fabrication of a new hetero a-Ge/a-Si structure operating as self-powered photodetectors (PD) in the near-infrared (NIR) range up to 900 nm, indicating a potential to serve as low cost, flexible and high performance radial junction sensing units for NIR imaging and PD applications | ||
| 650 | 4 | |a Journal Article | |
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| 700 | 1 | |a Yu, Linwei |e verfasserin |4 aut | |
| 700 | 1 | |a Xu, Ling |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Junzhuan |e verfasserin |4 aut | |
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