Broadband Nonlinear Optical Response of InSe Nanosheets for the Pulse Generation From 1 to 2 μm
Few-layered InSe nanosheets were fabricated by the simple liquid-phase exfoliation method. The morphology and crystal structure features of InSe nanosheet sample were characterized comprehensively. The photoluminescence (PL) spectrum indicated that the liquid-phase exfoliated InSe nanosheets contained variously layered nanoflakes, where eight layers nanosheets dominate. In addition, the first-principle simulation was carried out to describe the electron density of states (DOS) and the electronic band structures. Moreover, the few-layered InSe nanosheets performed excellent nonlinear absorption properties in a broad spectral band. As an application, the stable passively Q-switched (PQS) lasers with few-layered InSe nanosheets saturable absorbers (SAs) were realized with the operating wavelengths at 1.06, 1.34, and 1.91 μm. The shortest pulse durations were 599, 520, and 210 ns, respectively. Our results confirmed that the few-layered InSe nanosheets could be an excellent candidate for pulsed lasers in wide spectral bands.
Medienart: |
E-Artikel |
---|
Erscheinungsjahr: |
2019 |
---|---|
Erschienen: |
2019 |
Enthalten in: |
Zur Gesamtaufnahme - volume:11 |
---|---|
Enthalten in: |
ACS applied materials & interfaces - 11(2019), 51 vom: 26. Dez., Seite 48281-48289 |
Sprache: |
Englisch |
---|
Beteiligte Personen: |
Pan, Han [VerfasserIn] |
---|
Links: |
---|
Themen: |
Few-layered InSe nanosheets |
---|
Anmerkungen: |
Date Completed 30.12.2019 Date Revised 30.12.2019 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
---|
doi: |
10.1021/acsami.9b18632 |
---|
funding: |
|
---|---|
Förderinstitution / Projekttitel: |
|
PPN (Katalog-ID): |
NLM30435855X |
---|
LEADER | 01000naa a22002652 4500 | ||
---|---|---|---|
001 | NLM30435855X | ||
003 | DE-627 | ||
005 | 20231225114820.0 | ||
007 | cr uuu---uuuuu | ||
008 | 231225s2019 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.1021/acsami.9b18632 |2 doi | |
028 | 5 | 2 | |a pubmed24n1014.xml |
035 | |a (DE-627)NLM30435855X | ||
035 | |a (NLM)31834767 | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
100 | 1 | |a Pan, Han |e verfasserin |4 aut | |
245 | 1 | 0 | |a Broadband Nonlinear Optical Response of InSe Nanosheets for the Pulse Generation From 1 to 2 μm |
264 | 1 | |c 2019 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ƒaComputermedien |b c |2 rdamedia | ||
338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
500 | |a Date Completed 30.12.2019 | ||
500 | |a Date Revised 30.12.2019 | ||
500 | |a published: Print-Electronic | ||
500 | |a Citation Status PubMed-not-MEDLINE | ||
520 | |a Few-layered InSe nanosheets were fabricated by the simple liquid-phase exfoliation method. The morphology and crystal structure features of InSe nanosheet sample were characterized comprehensively. The photoluminescence (PL) spectrum indicated that the liquid-phase exfoliated InSe nanosheets contained variously layered nanoflakes, where eight layers nanosheets dominate. In addition, the first-principle simulation was carried out to describe the electron density of states (DOS) and the electronic band structures. Moreover, the few-layered InSe nanosheets performed excellent nonlinear absorption properties in a broad spectral band. As an application, the stable passively Q-switched (PQS) lasers with few-layered InSe nanosheets saturable absorbers (SAs) were realized with the operating wavelengths at 1.06, 1.34, and 1.91 μm. The shortest pulse durations were 599, 520, and 210 ns, respectively. Our results confirmed that the few-layered InSe nanosheets could be an excellent candidate for pulsed lasers in wide spectral bands | ||
650 | 4 | |a Journal Article | |
650 | 4 | |a Q-switching lasers | |
650 | 4 | |a Z-scan technique | |
650 | 4 | |a few-layered InSe nanosheets | |
650 | 4 | |a liquid-phase exfoliation | |
650 | 4 | |a nonlinear absorption properties | |
650 | 4 | |a saturable absorber | |
700 | 1 | |a Cao, Lihua |e verfasserin |4 aut | |
700 | 1 | |a Chu, Hongwei |e verfasserin |4 aut | |
700 | 1 | |a Wang, Yunzheng |e verfasserin |4 aut | |
700 | 1 | |a Zhao, Shengzhi |e verfasserin |4 aut | |
700 | 1 | |a Li, Ying |e verfasserin |4 aut | |
700 | 1 | |a Qi, Na |e verfasserin |4 aut | |
700 | 1 | |a Sun, Zhenlu |e verfasserin |4 aut | |
700 | 1 | |a Jiang, Xiantao |e verfasserin |4 aut | |
700 | 1 | |a Wang, Rui |e verfasserin |4 aut | |
700 | 1 | |a Zhang, Han |e verfasserin |4 aut | |
700 | 1 | |a Li, Dechun |e verfasserin |4 aut | |
773 | 0 | 8 | |i Enthalten in |t ACS applied materials & interfaces |d 2009 |g 11(2019), 51 vom: 26. Dez., Seite 48281-48289 |w (DE-627)NLM194100049 |x 1944-8252 |7 nnns |
773 | 1 | 8 | |g volume:11 |g year:2019 |g number:51 |g day:26 |g month:12 |g pages:48281-48289 |
856 | 4 | 0 | |u http://dx.doi.org/10.1021/acsami.9b18632 |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a GBV_NLM | ||
951 | |a AR | ||
952 | |d 11 |j 2019 |e 51 |b 26 |c 12 |h 48281-48289 |