High-Efficiency Single-Component Organic Light-Emitting Transistors
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim..
Construction of high-performance organic light-emitting transistors (OLETs) remains challenging due to the limited desired organic semiconductor materials. Here, two superior high mobility emissive organic semiconductors, 2,6-diphenylanthracene (DPA) and 2,6-di(2-naphthyl) anthracene (dNaAnt), are introduced into the construction of OLETs. By optimizing the device geometry for balanced ambipolar efficient charge transport and using high-quality DPA and dNaAnt single crystals as active layers, high-efficiency single-component OLETs are successfully fabricated, with the demonstration of strong and spatially controlled light emission within both p- and n- conducting channels and output of high external quantum efficiency (EQE). The obtained EQE values in current devices are approaching 1.61% for DPA-OLETs and 1.75% for dNaAnt-based OLETs, respectively, which are the highest EQE values for single-component OLETs in the common device configuration reported so far. Moreover, high brightnesses of 1210 and 3180 cd m-2 with current densities up to 1.3 and 8.4 kA cm-2 are also achieved for DPA- and dNaAnt-based OLETs, respectively. These results demonstrate the great potential applications of high mobility emissive organic semiconductors for next-generation rapid development of high-performance single-component OLETs and their related organic integrated electro-optical devices.
| Medienart: |
E-Artikel |
|---|
| Erscheinungsjahr: |
2019 |
|---|---|
| Erschienen: |
2019 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:31 |
|---|---|
| Enthalten in: |
Advanced materials (Deerfield Beach, Fla.) - 31(2019), 37 vom: 01. Sept., Seite e1903175 |
| Sprache: |
Englisch |
|---|
| Beteiligte Personen: |
Qin, Zhengsheng [VerfasserIn] |
|---|
| Links: |
|---|
| Themen: |
High efficiency |
|---|
| Anmerkungen: |
Date Completed 11.09.2019 Date Revised 01.10.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
|---|
| doi: |
10.1002/adma.201903175 |
|---|
| funding: |
|
|---|---|
| Förderinstitution / Projekttitel: |
|
| PPN (Katalog-ID): |
NLM299903095 |
|---|
| LEADER | 01000naa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM299903095 | ||
| 003 | DE-627 | ||
| 005 | 20231225101345.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 231225s2019 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1002/adma.201903175 |2 doi | |
| 028 | 5 | 2 | |a pubmed24n0999.xml |
| 035 | |a (DE-627)NLM299903095 | ||
| 035 | |a (NLM)31379034 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Qin, Zhengsheng |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a High-Efficiency Single-Component Organic Light-Emitting Transistors |
| 264 | 1 | |c 2019 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Completed 11.09.2019 | ||
| 500 | |a Date Revised 01.10.2020 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | ||
| 520 | |a Construction of high-performance organic light-emitting transistors (OLETs) remains challenging due to the limited desired organic semiconductor materials. Here, two superior high mobility emissive organic semiconductors, 2,6-diphenylanthracene (DPA) and 2,6-di(2-naphthyl) anthracene (dNaAnt), are introduced into the construction of OLETs. By optimizing the device geometry for balanced ambipolar efficient charge transport and using high-quality DPA and dNaAnt single crystals as active layers, high-efficiency single-component OLETs are successfully fabricated, with the demonstration of strong and spatially controlled light emission within both p- and n- conducting channels and output of high external quantum efficiency (EQE). The obtained EQE values in current devices are approaching 1.61% for DPA-OLETs and 1.75% for dNaAnt-based OLETs, respectively, which are the highest EQE values for single-component OLETs in the common device configuration reported so far. Moreover, high brightnesses of 1210 and 3180 cd m-2 with current densities up to 1.3 and 8.4 kA cm-2 are also achieved for DPA- and dNaAnt-based OLETs, respectively. These results demonstrate the great potential applications of high mobility emissive organic semiconductors for next-generation rapid development of high-performance single-component OLETs and their related organic integrated electro-optical devices | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a high efficiency | |
| 650 | 4 | |a high mobility | |
| 650 | 4 | |a organic light-emitting transistors | |
| 650 | 4 | |a organic semiconductors | |
| 650 | 4 | |a single component | |
| 650 | 4 | |a strong emission | |
| 700 | 1 | |a Gao, Haikuo |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Jinyu |e verfasserin |4 aut | |
| 700 | 1 | |a Zhou, Ke |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Jie |e verfasserin |4 aut | |
| 700 | 1 | |a Dang, Yangyang |e verfasserin |4 aut | |
| 700 | 1 | |a Huang, Le |e verfasserin |4 aut | |
| 700 | 1 | |a Deng, Huixiong |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Xiaotao |e verfasserin |4 aut | |
| 700 | 1 | |a Dong, Huanli |e verfasserin |4 aut | |
| 700 | 1 | |a Hu, Wenping |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Advanced materials (Deerfield Beach, Fla.) |d 1998 |g 31(2019), 37 vom: 01. Sept., Seite e1903175 |w (DE-627)NLM098206397 |x 1521-4095 |7 nnns |
| 773 | 1 | 8 | |g volume:31 |g year:2019 |g number:37 |g day:01 |g month:09 |g pages:e1903175 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1002/adma.201903175 |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 31 |j 2019 |e 37 |b 01 |c 09 |h e1903175 | ||