Controllable P- and N-Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim..
To realize basic electronic units such as complementary metal-oxide-semiconductor (CMOS) inverters and other logic circuits, the selective and controllable fabrication of p- and n-type transistors with a low Schottky barrier height is highly desirable. Herein, an efficient and nondestructive technique of electron-charge transfer doping by depositing a thin Al2 O3 layer on chemical vapor deposition (CVD)-grown 2H-MoTe2 is utilized to tune the doping from p- to n-type. Moreover, a type-controllable MoTe2 transistor with a low Schottky barrier height is prepared. The selectively converted n-type MoTe2 transistor from the p-channel exhibits a maximum on-state current of 10 µA, with a higher electron mobility of 8.9 cm2 V-1 s-1 at a drain voltage (Vds ) of 1 V with a low Schottky barrier height of 28.4 meV. To validate the aforementioned approach, a prototype homogeneous CMOS inverter is fabricated on a CVD-grown 2H-MoTe2 single crystal. The proposed inverter exhibits a high DC voltage gain of 9.2 with good dynamic behavior up to a modulation frequency of 1 kHz. The proposed approach may have potential for realizing future 2D transition metal dichalcogenide-based efficient and ultrafast electronic units with high-density circuit components under a low-dimensional regime.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2019 |
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| Erschienen: |
2019 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:15 |
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| Enthalten in: |
Small (Weinheim an der Bergstrasse, Germany) - 15(2019), 28 vom: 01. Juli, Seite e1901772 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Park, Yong Ju [VerfasserIn] |
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| Links: |
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| Themen: |
Electron doping |
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| Anmerkungen: |
Date Revised 23.09.2019 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1002/smll.201901772 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM297185454 |
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| LEADER | 01000naa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM297185454 | ||
| 003 | DE-627 | ||
| 005 | 20231225091437.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 231225s2019 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1002/smll.201901772 |2 doi | |
| 028 | 5 | 2 | |a pubmed24n0990.xml |
| 035 | |a (DE-627)NLM297185454 | ||
| 035 | |a (NLM)31099978 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Park, Yong Ju |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Controllable P- and N-Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits |
| 264 | 1 | |c 2019 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Revised 23.09.2019 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | ||
| 520 | |a To realize basic electronic units such as complementary metal-oxide-semiconductor (CMOS) inverters and other logic circuits, the selective and controllable fabrication of p- and n-type transistors with a low Schottky barrier height is highly desirable. Herein, an efficient and nondestructive technique of electron-charge transfer doping by depositing a thin Al2 O3 layer on chemical vapor deposition (CVD)-grown 2H-MoTe2 is utilized to tune the doping from p- to n-type. Moreover, a type-controllable MoTe2 transistor with a low Schottky barrier height is prepared. The selectively converted n-type MoTe2 transistor from the p-channel exhibits a maximum on-state current of 10 µA, with a higher electron mobility of 8.9 cm2 V-1 s-1 at a drain voltage (Vds ) of 1 V with a low Schottky barrier height of 28.4 meV. To validate the aforementioned approach, a prototype homogeneous CMOS inverter is fabricated on a CVD-grown 2H-MoTe2 single crystal. The proposed inverter exhibits a high DC voltage gain of 9.2 with good dynamic behavior up to a modulation frequency of 1 kHz. The proposed approach may have potential for realizing future 2D transition metal dichalcogenide-based efficient and ultrafast electronic units with high-density circuit components under a low-dimensional regime | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a MoTe2 | |
| 650 | 4 | |a electron doping | |
| 650 | 4 | |a logic gate | |
| 650 | 4 | |a transistors | |
| 650 | 4 | |a type conversion | |
| 700 | 1 | |a Katiyar, Ajit K |e verfasserin |4 aut | |
| 700 | 1 | |a Hoang, Anh Tuan |e verfasserin |4 aut | |
| 700 | 1 | |a Ahn, Jong-Hyun |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Small (Weinheim an der Bergstrasse, Germany) |d 2005 |g 15(2019), 28 vom: 01. Juli, Seite e1901772 |w (DE-627)NLM167400452 |x 1613-6829 |7 nnns |
| 773 | 1 | 8 | |g volume:15 |g year:2019 |g number:28 |g day:01 |g month:07 |g pages:e1901772 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1002/smll.201901772 |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 15 |j 2019 |e 28 |b 01 |c 07 |h e1901772 | ||