Solution Processing for Lateral Transition-Metal Dichalcogenides Homojunction from Polymorphic Crystal
Homojunctions comprised of transition-metal dichalcogenides (TMD) polymorphs are attractive building blocks for next-generation two-dimensional (2D) electronic circuitry. However, the synthesis of such homojunctions, which usually involves elaborate manipulation at the nanoscale, still remains a great challenge. Herein, we demonstrated a solution-processing strategy to successfully harvest lateral semiconductor-metal homojunctions with high yield. Specially, through precisely controlled lithiation process, precursors of polymorphic crystal arranged with 1T-2H domains were successfully achieved. A programmed exfoliation procedure was further employed to orderly laminate each phase in the polymorphic crystal, thus leading to 1T-2H TMD homojunction monolayers with sizes up to tens of micrometers. Moreover, the atomically sharp boundaries and superior band alignment improved the device on the basis of the semiconductor-metal homojunction with 50% decrease of electric field strength required in the derivation of state transition. We anticipate that solution processing based on programmed exfoliation would be a powerful tool to produce new configurations of 2D nanomaterials.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2019 |
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| Erschienen: |
2019 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:141 |
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| Enthalten in: |
Journal of the American Chemical Society - 141(2019), 1 vom: 09. Jan., Seite 592-598 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Wu, Jiajing [VerfasserIn] |
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| Links: |
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| Anmerkungen: |
Date Revised 20.11.2019 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/jacs.8b11656 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM291713203 |
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| 520 | |a Homojunctions comprised of transition-metal dichalcogenides (TMD) polymorphs are attractive building blocks for next-generation two-dimensional (2D) electronic circuitry. However, the synthesis of such homojunctions, which usually involves elaborate manipulation at the nanoscale, still remains a great challenge. Herein, we demonstrated a solution-processing strategy to successfully harvest lateral semiconductor-metal homojunctions with high yield. Specially, through precisely controlled lithiation process, precursors of polymorphic crystal arranged with 1T-2H domains were successfully achieved. A programmed exfoliation procedure was further employed to orderly laminate each phase in the polymorphic crystal, thus leading to 1T-2H TMD homojunction monolayers with sizes up to tens of micrometers. Moreover, the atomically sharp boundaries and superior band alignment improved the device on the basis of the semiconductor-metal homojunction with 50% decrease of electric field strength required in the derivation of state transition. We anticipate that solution processing based on programmed exfoliation would be a powerful tool to produce new configurations of 2D nanomaterials | ||
| 650 | 4 | |a Journal Article | |
| 700 | 1 | |a Peng, Jing |e verfasserin |4 aut | |
| 700 | 1 | |a Zhou, Yuan |e verfasserin |4 aut | |
| 700 | 1 | |a Lin, Yue |e verfasserin |4 aut | |
| 700 | 1 | |a Wen, Xiaolei |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Junchi |e verfasserin |4 aut | |
| 700 | 1 | |a Zhao, Yingcheng |e verfasserin |4 aut | |
| 700 | 1 | |a Guo, Yuqiao |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Changzheng |e verfasserin |4 aut | |
| 700 | 1 | |a Xie, Yi |e verfasserin |4 aut | |
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