Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works..
Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2018 |
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| Erschienen: |
2018 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:362 |
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| Enthalten in: |
Science (New York, N.Y.) - 362(2018), 6415 vom: 09. Nov., Seite 665-670 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Shim, Jaewoo [VerfasserIn] |
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| Links: |
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| Anmerkungen: |
Date Revised 20.11.2019 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1126/science.aat8126 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM289448786 |
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| 245 | 1 | 0 | |a Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials |
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| 520 | |a Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. | ||
| 520 | |a Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a Research Support, Non-U.S. Gov't | |
| 700 | 1 | |a Bae, Sang-Hoon |e verfasserin |4 aut | |
| 700 | 1 | |a Kong, Wei |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, Doyoon |e verfasserin |4 aut | |
| 700 | 1 | |a Qiao, Kuan |e verfasserin |4 aut | |
| 700 | 1 | |a Nezich, Daniel |e verfasserin |4 aut | |
| 700 | 1 | |a Park, Yong Ju |e verfasserin |4 aut | |
| 700 | 1 | |a Zhao, Ruike |e verfasserin |4 aut | |
| 700 | 1 | |a Sundaram, Suresh |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Xin |e verfasserin |4 aut | |
| 700 | 1 | |a Yeon, Hanwool |e verfasserin |4 aut | |
| 700 | 1 | |a Choi, Chanyeol |e verfasserin |4 aut | |
| 700 | 1 | |a Kum, Hyun |e verfasserin |4 aut | |
| 700 | 1 | |a Yue, Ruoyu |e verfasserin |4 aut | |
| 700 | 1 | |a Zhou, Guanyu |e verfasserin |4 aut | |
| 700 | 1 | |a Ou, Yunbo |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, Kyusang |e verfasserin |4 aut | |
| 700 | 1 | |a Moodera, Jagadeesh |e verfasserin |4 aut | |
| 700 | 1 | |a Zhao, Xuanhe |e verfasserin |4 aut | |
| 700 | 1 | |a Ahn, Jong-Hyun |e verfasserin |4 aut | |
| 700 | 1 | |a Hinkle, Christopher |e verfasserin |4 aut | |
| 700 | 1 | |a Ougazzaden, Abdallah |e verfasserin |4 aut | |
| 700 | 1 | |a Kim, Jeehwan |e verfasserin |4 aut | |
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