Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe

The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising applications of unusual magnetoresistance (MR) properties. Herein, we systematically investigated the anisotropic MR in the newly-discovered Dirac node-line material ZrSiSe. By applying a magnetic field of 3 T by a vector field, three-dimensional (3D) MR shows the strong anisotropy. The MR ratio of maximum and minimum directions reaches 7 at 3 T and keeps increasing at the higher magnetic field. The anisotropic MR forms a butterfly-shaped curve, indicating the quasi-2D electronic structures. This is further confirmed by the angular dependent Shubnikov-de Haas oscillations. The first-principles calculations establish the quasi-2D tubular-shaped Fermi surface near the X point in the Brillouin zone. Our finding sheds light on the 3D mapping of MR and the potential applications in magnetic sensors based on ZrSiSe.

Medienart:

E-Artikel

Erscheinungsjahr:

2018

Erschienen:

2018

Enthalten in:

Zur Gesamtaufnahme - volume:8

Enthalten in:

Scientific reports - 8(2018), 1 vom: 19. Juni, Seite 9340

Sprache:

Englisch

Beteiligte Personen:

Pan, Haiyang [VerfasserIn]
Tong, Bingbing [VerfasserIn]
Yu, Jihai [VerfasserIn]
Wang, Jue [VerfasserIn]
Fu, Dongzhi [VerfasserIn]
Zhang, Shuai [VerfasserIn]
Wu, Bin [VerfasserIn]
Wan, Xiangang [VerfasserIn]
Zhang, Chi [VerfasserIn]
Wang, Xuefeng [VerfasserIn]
Song, Fengqi [VerfasserIn]

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Date Revised 20.11.2019

published: Electronic

Citation Status PubMed-not-MEDLINE

doi:

10.1038/s41598-018-27148-z

funding:

Förderinstitution / Projekttitel:

PPN (Katalog-ID):

NLM285658417