Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks
The bandgap tunability of (Si)GeSn group IV semiconductors opens a new era in Si-technology. Depending on the Si/Sn contents, direct and indirect bandgaps in the range of 0.4-0.8 eV can be obtained, offering a broad spectrum of both photonic and low power electronic applications. In this work, we systematically studied capacitance-voltage characteristics of high-k/metal gate stacks formed on GeSn and SiGeSn alloys with Sn-contents ranging from 0 to 14 at. % and Si-contents from 0 to 10 at. % particularly focusing on the minority carrier inversion response. A clear correlation between the Sn-induced shrinkage of the bandgap energy and enhanced minority carrier response was confirmed using temperature and frequency dependent capacitance voltage-measurements, in good agreement with k.p theory predictions and photoluminescence measurements of the analyzed epilayers as reported earlier. The enhanced minority generation rate for higher Sn-contents can be firmly linked to the bandgap reduction in the GeSn epilayer without significant influence of substrate/interface effects. It thus offers a unique possibility to analyze intrinsic defects in (Si)GeSn epilayers. The extracted dominant defect level for minority carrier inversion lies approximately 0.4 eV above the valence band edge in the studied Sn-content range (0-12.5 at. %). This finding is of critical importance since it shows that the presence of Sn by itself does not impair the minority carrier lifetime. Therefore, the continuous improvement of (Si)GeSn material quality should yield longer nonradiative recombination times which are required for the fabrication of efficient light detectors and to obtain room temperature lasing action.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2017 |
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| Erschienen: |
2017 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:9 |
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| Enthalten in: |
ACS applied materials & interfaces - 9(2017), 10 vom: 15. März, Seite 9102-9109 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Schulte-Braucks, C [VerfasserIn] |
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| Links: |
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| Themen: |
Defects |
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| Anmerkungen: |
Date Completed 27.07.2018 Date Revised 27.07.2018 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acsami.6b15279 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM269160396 |
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| LEADER | 01000naa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM269160396 | ||
| 003 | DE-627 | ||
| 005 | 20231224224029.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 231224s2017 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1021/acsami.6b15279 |2 doi | |
| 028 | 5 | 2 | |a pubmed24n0897.xml |
| 035 | |a (DE-627)NLM269160396 | ||
| 035 | |a (NLM)28221764 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Schulte-Braucks, C |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks |
| 264 | 1 | |c 2017 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Completed 27.07.2018 | ||
| 500 | |a Date Revised 27.07.2018 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a The bandgap tunability of (Si)GeSn group IV semiconductors opens a new era in Si-technology. Depending on the Si/Sn contents, direct and indirect bandgaps in the range of 0.4-0.8 eV can be obtained, offering a broad spectrum of both photonic and low power electronic applications. In this work, we systematically studied capacitance-voltage characteristics of high-k/metal gate stacks formed on GeSn and SiGeSn alloys with Sn-contents ranging from 0 to 14 at. % and Si-contents from 0 to 10 at. % particularly focusing on the minority carrier inversion response. A clear correlation between the Sn-induced shrinkage of the bandgap energy and enhanced minority carrier response was confirmed using temperature and frequency dependent capacitance voltage-measurements, in good agreement with k.p theory predictions and photoluminescence measurements of the analyzed epilayers as reported earlier. The enhanced minority generation rate for higher Sn-contents can be firmly linked to the bandgap reduction in the GeSn epilayer without significant influence of substrate/interface effects. It thus offers a unique possibility to analyze intrinsic defects in (Si)GeSn epilayers. The extracted dominant defect level for minority carrier inversion lies approximately 0.4 eV above the valence band edge in the studied Sn-content range (0-12.5 at. %). This finding is of critical importance since it shows that the presence of Sn by itself does not impair the minority carrier lifetime. Therefore, the continuous improvement of (Si)GeSn material quality should yield longer nonradiative recombination times which are required for the fabrication of efficient light detectors and to obtain room temperature lasing action | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a GeSn | |
| 650 | 4 | |a defects | |
| 650 | 4 | |a direct band gap | |
| 650 | 4 | |a generation/recombination | |
| 650 | 4 | |a high-k/metal gate | |
| 700 | 1 | |a Narimani, K |e verfasserin |4 aut | |
| 700 | 1 | |a Glass, S |e verfasserin |4 aut | |
| 700 | 1 | |a von den Driesch, N |e verfasserin |4 aut | |
| 700 | 1 | |a Hartmann, J M |e verfasserin |4 aut | |
| 700 | 1 | |a Ikonic, Z |e verfasserin |4 aut | |
| 700 | 1 | |a Afanas'ev, V V |e verfasserin |4 aut | |
| 700 | 1 | |a Zhao, Q T |e verfasserin |4 aut | |
| 700 | 1 | |a Mantl, S |e verfasserin |4 aut | |
| 700 | 1 | |a Buca, D |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t ACS applied materials & interfaces |d 2009 |g 9(2017), 10 vom: 15. März, Seite 9102-9109 |w (DE-627)NLM194100049 |x 1944-8252 |7 nnns |
| 773 | 1 | 8 | |g volume:9 |g year:2017 |g number:10 |g day:15 |g month:03 |g pages:9102-9109 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1021/acsami.6b15279 |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 9 |j 2017 |e 10 |b 15 |c 03 |h 9102-9109 | ||