Large-Area Nano-patterning and Fabrication of Vertical Transistor Array by Non-close-packed Polystyrene Spheres
We demonstrated a large-area nanopatterning technique with the help of a non-close-packed PS sphere layer over a large-area substrate. The non-close-packed PS sphere layer is fabricated by blade coating method. It was demonstrated that non-close-packed PS spheres can be achieved within an area of 18 cm × 25 cm on a rigid glass substrate and within an area of 10 cm × 10 cm on a flexible substrate. We also demonstrated that the blade-coated non-close-packed PS sphere layer was suitable for the mass production of vertical organic transistors over a large area.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2015 |
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Erschienen: |
2015 |
Enthalten in: |
Zur Gesamtaufnahme - volume:7 |
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Enthalten in: |
ACS applied materials & interfaces - 7(2015), 34 vom: 02. Sept., Seite 18899-903 |
Sprache: |
Englisch |
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Beteiligte Personen: |
Chen, Yen-Ming [VerfasserIn] |
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Links: |
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Themen: |
Large-area nanopattering |
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Anmerkungen: |
Date Completed 22.12.2015 Date Revised 02.09.2015 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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doi: |
10.1021/acsami.5b03724 |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
NLM251883485 |
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520 | |a We demonstrated a large-area nanopatterning technique with the help of a non-close-packed PS sphere layer over a large-area substrate. The non-close-packed PS sphere layer is fabricated by blade coating method. It was demonstrated that non-close-packed PS spheres can be achieved within an area of 18 cm × 25 cm on a rigid glass substrate and within an area of 10 cm × 10 cm on a flexible substrate. We also demonstrated that the blade-coated non-close-packed PS sphere layer was suitable for the mass production of vertical organic transistors over a large area | ||
650 | 4 | |a Letter | |
650 | 4 | |a Research Support, Non-U.S. Gov't | |
650 | 4 | |a large-area nanopattering | |
650 | 4 | |a nanosphere lithography | |
650 | 4 | |a organic transistors | |
650 | 4 | |a polymer transistors | |
650 | 4 | |a vertical transistors | |
700 | 1 | |a Lai, Yu-Yen |e verfasserin |4 aut | |
700 | 1 | |a Chao, Yu-Chiang |e verfasserin |4 aut | |
700 | 1 | |a Zan, Hsiao-Wen |e verfasserin |4 aut | |
700 | 1 | |a Meng, Hsin-Fei |e verfasserin |4 aut | |
700 | 1 | |a Horng, Sheng-Fu |e verfasserin |4 aut | |
700 | 1 | |a Chang, Che-Hao |e verfasserin |4 aut | |
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