Piezoresistivity of ultra-thin poly-silicon layer by aluminum-induced layer exchange
Poly-Si film, due to its favorable piezoresistive properties, has been widely used in piezoresistive sensors. The previous researches have shown that the ultra-thin poly-Si film have better piezoresistive properties than common poly-silicon film, and have promising future of application. A promising method to obtain large grained high quality poly-silicon films by low-temperature crystallization of an amorphous precursor material is the aluminum-induced layer exchange (ALILE). In this paper, ultra-thin poly-Si films were prepared by aluminum induced layer exchange (ALILE). Experimental results of Raman spectroscopy show that a narrow and symmetrical Raman peak at the wave number of about 518 cm(-1) was observed for all samples, indicating that the films were fully crystallized. XRD results show that the crystallites of ultra-thin poly-silicon layer were preferably (111) and (220) oriented. Hall affect measurements show that hole concentration of the films (p-type) were between 9 x 10(18) and 6 x 10(19) cm(-3). Restorative properties show that the piezoresistors exhibit gauge factors (GFs) up to 60, with temperature coefficients of GF (TCGF) between -0.17-0% degree C and temperature coefficients of resistance (TCR) between -0.2 and -0.1% degrees C. The study of the ultra-thin poly-Si films by ALILE is completed, and the study results lay a foundation for application of the film.
| Medienart: |
Artikel |
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| Erscheinungsjahr: |
2015 |
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| Erschienen: |
2015 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:35 |
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| Enthalten in: |
Guang pu xue yu guang pu fen xi = Guang pu - 35(2015), 2 vom: 13. Feb., Seite 474-8 |
| Sprache: |
Chinesisch |
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| Beteiligte Personen: |
Wang, Cheng-long [VerfasserIn] |
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| Themen: |
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| Anmerkungen: |
Date Completed 01.09.2015 Date Revised 14.05.2015 published: Print Citation Status PubMed-not-MEDLINE |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM248980734 |
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| 500 | |a Date Revised 14.05.2015 | ||
| 500 | |a published: Print | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Poly-Si film, due to its favorable piezoresistive properties, has been widely used in piezoresistive sensors. The previous researches have shown that the ultra-thin poly-Si film have better piezoresistive properties than common poly-silicon film, and have promising future of application. A promising method to obtain large grained high quality poly-silicon films by low-temperature crystallization of an amorphous precursor material is the aluminum-induced layer exchange (ALILE). In this paper, ultra-thin poly-Si films were prepared by aluminum induced layer exchange (ALILE). Experimental results of Raman spectroscopy show that a narrow and symmetrical Raman peak at the wave number of about 518 cm(-1) was observed for all samples, indicating that the films were fully crystallized. XRD results show that the crystallites of ultra-thin poly-silicon layer were preferably (111) and (220) oriented. Hall affect measurements show that hole concentration of the films (p-type) were between 9 x 10(18) and 6 x 10(19) cm(-3). Restorative properties show that the piezoresistors exhibit gauge factors (GFs) up to 60, with temperature coefficients of GF (TCGF) between -0.17-0% degree C and temperature coefficients of resistance (TCR) between -0.2 and -0.1% degrees C. The study of the ultra-thin poly-Si films by ALILE is completed, and the study results lay a foundation for application of the film | ||
| 650 | 4 | |a English Abstract | |
| 650 | 4 | |a Journal Article | |
| 700 | 1 | |a Ma, Jun |e verfasserin |4 aut | |
| 700 | 1 | |a Fan, Duo-wang |e verfasserin |4 aut | |
| 700 | 1 | |a Xing, Da |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Song-hao |e verfasserin |4 aut | |
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