Performance enhancement of a GaAs detector with a vertical field and an embedded thin low-temperature grown layer
Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster--~6 ps for a cathode-anode separation of 1.3 μm and ~12 ps for distances more than 3 μm.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2013 |
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| Erschienen: |
2013 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:13 |
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| Enthalten in: |
Sensors (Basel, Switzerland) - 13(2013), 2 vom: 18. Feb., Seite 2475-83 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Currie, Marc [VerfasserIn] |
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| Links: |
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| Anmerkungen: |
Date Completed 18.12.2013 Date Revised 21.10.2021 published: Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.3390/s130202475 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM225216264 |
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| 100 | 1 | |a Currie, Marc |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Performance enhancement of a GaAs detector with a vertical field and an embedded thin low-temperature grown layer |
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| 500 | |a Date Completed 18.12.2013 | ||
| 500 | |a Date Revised 21.10.2021 | ||
| 500 | |a published: Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster--~6 ps for a cathode-anode separation of 1.3 μm and ~12 ps for distances more than 3 μm | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a Research Support, U.S. Gov't, Non-P.H.S. | |
| 700 | 1 | |a Dianat, Pouya |e verfasserin |4 aut | |
| 700 | 1 | |a Persano, Anna |e verfasserin |4 aut | |
| 700 | 1 | |a Martucci, Maria Concetta |e verfasserin |4 aut | |
| 700 | 1 | |a Quaranta, Fabio |e verfasserin |4 aut | |
| 700 | 1 | |a Cola, Adriano |e verfasserin |4 aut | |
| 700 | 1 | |a Nabet, Bahram |e verfasserin |4 aut | |
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