Fabrication and ultraviolet photoresponse characteristics of ordered SnOx (x ≈ 0.87, 1.45, 2) nanopore films
Based on the porous anodic aluminum oxide templates, ordered SnOx nanopore films (approximately 150 nm thickness) with different x (x ≈ 0.87, 1.45, 2) have been successfully fabricated by direct current magnetron sputtering and oxidizing annealing. Due to the high specific surface area, this ordered nanopore films exhibit a great improvement in recovery time compared to thin films for ultraviolet (UV) detection. Especially, the ordered SnOx nanopore films with lower x reveal higher UV light sensitivity and shorter current recovery time, which was explained by the higher concentration of the oxygen vacancies in this SnOx films. This work presents a potential candidate material for UV light detector.PACS: 81.15.Cd, 81.40.Ef, 81.70.Jb, 85.60.Gz.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2011 |
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Erschienen: |
2011 |
Enthalten in: |
Zur Gesamtaufnahme - volume:6 |
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Enthalten in: |
Nanoscale research letters - 6(2011), 1 vom: 06. Dez., Seite 615 |
Sprache: |
Englisch |
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Beteiligte Personen: |
Li, Changli [VerfasserIn] |
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Date Completed 02.10.2012 Date Revised 21.10.2021 published: Electronic Citation Status PubMed-not-MEDLINE |
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doi: |
10.1186/1556-276X-6-615 |
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funding: |
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PPN (Katalog-ID): |
NLM213601761 |
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520 | |a Based on the porous anodic aluminum oxide templates, ordered SnOx nanopore films (approximately 150 nm thickness) with different x (x ≈ 0.87, 1.45, 2) have been successfully fabricated by direct current magnetron sputtering and oxidizing annealing. Due to the high specific surface area, this ordered nanopore films exhibit a great improvement in recovery time compared to thin films for ultraviolet (UV) detection. Especially, the ordered SnOx nanopore films with lower x reveal higher UV light sensitivity and shorter current recovery time, which was explained by the higher concentration of the oxygen vacancies in this SnOx films. This work presents a potential candidate material for UV light detector.PACS: 81.15.Cd, 81.40.Ef, 81.70.Jb, 85.60.Gz | ||
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700 | 1 | |a Shen, Wenzhong |e verfasserin |4 aut | |
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