Ferromagnetism in dilute magnetic semiconductors through defect engineering : Li-doped ZnO
We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2010 |
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| Erschienen: |
2010 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:104 |
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| Enthalten in: |
Physical review letters - 104(2010), 13 vom: 02. Apr., Seite 137201 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Yi, J B [VerfasserIn] |
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| Themen: |
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| Anmerkungen: |
Date Completed 11.08.2010 Date Revised 20.05.2010 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM198200501 |
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| 245 | 1 | 0 | |a Ferromagnetism in dilute magnetic semiconductors through defect engineering |b Li-doped ZnO |
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| 500 | |a Date Revised 20.05.2010 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure | ||
| 650 | 4 | |a Journal Article | |
| 700 | 1 | |a Lim, C C |e verfasserin |4 aut | |
| 700 | 1 | |a Xing, G Z |e verfasserin |4 aut | |
| 700 | 1 | |a Fan, H M |e verfasserin |4 aut | |
| 700 | 1 | |a Van, L H |e verfasserin |4 aut | |
| 700 | 1 | |a Huang, S L |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, K S |e verfasserin |4 aut | |
| 700 | 1 | |a Huang, X L |e verfasserin |4 aut | |
| 700 | 1 | |a Qin, X B |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, B Y |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, T |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, L |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, H T |e verfasserin |4 aut | |
| 700 | 1 | |a Gao, X Y |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, T |e verfasserin |4 aut | |
| 700 | 1 | |a Wee, A T S |e verfasserin |4 aut | |
| 700 | 1 | |a Feng, Y P |e verfasserin |4 aut | |
| 700 | 1 | |a Ding, J |e verfasserin |4 aut | |
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