Dual-ion-beam sputter deposition of ZnO films
Physical properties of zinc oxide films deposited by dual-ion-beam sputtering are analyzed to point out the performance of this technique for the deposition of this material. The films are deposited by sputtering a zinc oxide target with an argon-ion beam, while a second low-energy beam, the assistance ion beam, impinges directly on the growing films. Results are presented for ZnO films deposited at room temperature with different oxygen/argon ratios in assistance ion beam and different sputtering ion-beam currents. Elemental, structural, and electrical analyses have been performed on films. All the films show the typical crystallographic orientation, with the c axis perpendicular to the substrate. The oxygen percentage in the assistance ion beam plays an important role in controlling the electrical resistivity of the films..
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
1993 |
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| Erschienen: |
1993 |
| Reproduktion: |
AIP Digital Archive |
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| Enthalten in: |
Zur Gesamtaufnahme - volume:74 |
| Enthalten in: |
Journal of Applied Physics - 74(1993), 1, Seite 244-248 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Quaranta, Fabio [Sonstige Person] |
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| Links: |
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| Themen: |
CHEMICAL COMPOSITION |
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| Umfang: |
5 |
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| doi: |
10.1063/1.354152 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLEJ218589131 |
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| 520 | |a Physical properties of zinc oxide films deposited by dual-ion-beam sputtering are analyzed to point out the performance of this technique for the deposition of this material. The films are deposited by sputtering a zinc oxide target with an argon-ion beam, while a second low-energy beam, the assistance ion beam, impinges directly on the growing films. Results are presented for ZnO films deposited at room temperature with different oxygen/argon ratios in assistance ion beam and different sputtering ion-beam currents. Elemental, structural, and electrical analyses have been performed on films. All the films show the typical crystallographic orientation, with the c axis perpendicular to the substrate. The oxygen percentage in the assistance ion beam plays an important role in controlling the electrical resistivity of the films. | ||
| 533 | |f AIP Digital Archive | ||
| 650 | 4 | |a ZINC OXIDES | |
| 650 | 4 | |a THIN FILMS | |
| 650 | 4 | |a SPUTTERING | |
| 650 | 4 | |a MICROSTRUCTURE | |
| 650 | 4 | |a ELECTRIC CONDUCTIVITY | |
| 650 | 4 | |a PHOTOELECTRON SPECTROSCOPY | |
| 650 | 4 | |a CHEMICAL COMPOSITION | |
| 650 | 4 | |a OPTICAL PROPERTIES | |
| 700 | 1 | |a Quaranta, Fabio |4 oth | |
| 700 | 1 | |a Valentini, Antonio |4 oth | |
| 700 | 1 | |a Rizzi, Federica R. |4 oth | |
| 700 | 1 | |a Casamassima, Giuseppe |4 oth | |
| 773 | 0 | 8 | |i In |t Journal of Applied Physics |d [S.l.], 1931 |g 74(1993), 1, Seite 244-248 |h Online-Ressource |w (DE-627)NLEJ217994199 |w (DE-600)1476463-5 |x 1089-7550 |7 nnns |
| 773 | 1 | 8 | |g volume:74 |g year:1993 |g number:1 |g pages:244-248 |g extent:5 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1063/1.354152 |
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