FIELD EFFECT TRANSISTOR BASED ON TWO-

In at least one illustrative embodiment, a field effect transistor biosensor for detecting pathogens includes a substrate and a channel formed from a two-dimensional single-layer or multi-layer metal chalcogenide (104) functionalized with a biometric element. The biorecognition element may be an antibody, such as an antibody against SARS-CoV-2 spike protein. A method for manufacturing a biosensor includes depositing an amorphous two-dimensional material on a substrate with pulsed laser ablation, crystallizing the amorphous two-dimensional material to generate a two-dimensional monolayer coupled to the substrate, and activating a surface of the two-dimensional material with a biometric element after crystallizing the amorphous two-dimensional material. The composition of the two-dimensional material may be tuned. The substrate may be photolithographically patterned. Other embodiments are described and claimed..

Medienart:

Patent

Erscheinungsjahr:

2023

Erschienen:

2023

Enthalten in:

Europäisches Patentamt - (2023) vom: 22. Sept. Zur Gesamtaufnahme - year:2023

Sprache:

Englisch

Beteiligte Personen:

MAHESH JURISAMANI MASOUD [VerfasserIn]
HAMILTON MICHAEL C [VerfasserIn]
KURODA MARCELO [VerfasserIn]
HASIM SAHAR [VerfasserIn]
FARSHIHAVSHYANI PARVIN [VerfasserIn]

Links:

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Themen:

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Anmerkungen:

Source: www.epo.org (no modifications made), First posted: 2023-09-22, Last update posted on www.tib.eu: 2023-12-19, Last updated: 2023-12-22

Patentnummer:

CN116802144

Förderinstitution / Projekttitel:

PPN (Katalog-ID):

EPA018782825