Hybrid integrated SRAM (Static Random Access Memory) storage unit structure and preparation method thereof
The invention relates to a hybrid integrated SRAM (Static Random Access Memory) storage unit structure and a preparation method thereof. According to the invention, a FinFET structure with a larger driving current and a GAAFET with a smaller driving current are respectively formed at different positions by selecting a part of the region not to perform channel release and selecting the other regions to perform channel release, so that hybrid integration of the GAAFET and the FinFET is realized, the circuit area is not increased during transistor proportion design, and further improvement of the integration density is facilitated..
Medienart: |
Patent |
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Erscheinungsjahr: |
2023 |
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Erschienen: |
2023 |
Enthalten in: |
Europäisches Patentamt - (2023) vom: 15. Aug. Zur Gesamtaufnahme - year:2023 |
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Sprache: |
Englisch |
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Beteiligte Personen: |
YIN HUAXIANG [VerfasserIn] |
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Links: |
Volltext [kostenfrei] |
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Themen: |
Sonstige Themen: |
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Anmerkungen: |
Source: www.epo.org (no modifications made), First posted: 2023-08-15, Last update posted on www.tib.eu: 2023-12-05, Last updated: 2023-12-08 |
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Patentnummer: |
CN116600563 |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
EPA018533612 |
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520 | |a The invention relates to a hybrid integrated SRAM (Static Random Access Memory) storage unit structure and a preparation method thereof. According to the invention, a FinFET structure with a larger driving current and a GAAFET with a smaller driving current are respectively formed at different positions by selecting a part of the region not to perform channel release and selecting the other regions to perform channel release, so that hybrid integration of the GAAFET and the FinFET is realized, the circuit area is not increased during transistor proportion design, and further improvement of the integration density is facilitated. | ||
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