METAL-INSULATOR-METAL (MIM) ENERGY STORAGE DEVICE WITH LAYERED STACK AND MANUFACTURING METHOD
A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction-controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd-numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack..
| Medienart: |
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Patent| Erscheinungsjahr: |
2023 |
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| Erschienen: |
2023 |
| Enthalten in: |
Europäisches Patentamt - (2023) vom: 22. Feb. Zur Gesamtaufnahme - year:2023 |
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| Sprache: |
Englisch |
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| Beteiligte Personen: |
KABIR M SHAFIQUL [VerfasserIn] |
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| Links: |
Volltext [kostenfrei] |
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| Anmerkungen: |
Source: www.epo.org (no modifications made), First posted: 2023-02-22, Last update posted on www.tib.eu: 2023-06-29, Last updated: 2023-07-08 |
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| Patentnummer: |
EP4136664 |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
EPA016385888 |
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| 245 | 1 | 0 | |a METAL-INSULATOR-METAL (MIM) ENERGY STORAGE DEVICE WITH LAYERED STACK AND MANUFACTURING METHOD |
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| 520 | |a A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction-controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd-numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack. | ||
| 650 | 4 | |a B82B: Nanostructures formed by manipulation of individual atoms, molecules, or limited collections of atoms or molecules as discrete units; manufacture or treatment thereof | |
| 650 | 4 | |a H01L: Semiconductor devices; electric solid state devices not otherwise provided for (use of semiconductor devices for measuring g01;resistors in general h01c;magnets, inductors, transformers h01f;capacitors in general h01g;electrolytic devices h01g0009000000;batteries, accumulators h01m;waveguides, resonators, or lines of the waveguide type h01p;line connectors, current collectors h01r;stimulated-emission devices h01s;electromechanical resonators h03h;loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers h04r;electric light sources in general h05b;printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components h05k;use of semiconductor devices in circuits having a particular application, see the subclass for the application) | |
| 650 | 4 | |a H05K: Printed circuits; casings or constructional details of electric apparatus; manufacture of assemblages of electrical components | |
| 650 | 4 | |a B82Y: Specific uses or applications of nanostructures; measurement or analysis of nanostructures; manufacture or treatment of nanostructures | |
| 650 | 4 | |a elt | |
| 650 | 4 | |a H01G: Capacitors; capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices of the electrolytic type (selection of specified materials as dielectric h01b0003000000;capacitors with potential-jump or surface barrier h01l0029000000) | |
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