PATTERNED STRUCTURED TRANSFER TAPE
Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill layer is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer..
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Patent| Erscheinungsjahr: |
2022 |
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| Erschienen: |
2022 |
| Enthalten in: |
Europäisches Patentamt - (2022) vom: 13. Okt. Zur Gesamtaufnahme - year:2022 |
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| Sprache: |
Englisch |
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| Beteiligte Personen: |
WOLK MARTIN B [VerfasserIn] |
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| Links: |
Volltext [kostenfrei] |
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| Anmerkungen: |
Source: www.epo.org (no modifications made), First posted: 2022-10-13, Last update posted on www.tib.eu: 2024-01-02, Last updated: 2024-01-05 |
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| Patentnummer: |
US2022324195 |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
EPA015819108 |
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| 520 | |a Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill layer is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer. | ||
| 650 | 4 | |a H01L: Semiconductor devices; electric solid state devices not otherwise provided for (use of semiconductor devices for measuring g01;resistors in general h01c;magnets, inductors, transformers h01f;capacitors in general h01g;electrolytic devices h01g0009000000;batteries, accumulators h01m;waveguides, resonators, or lines of the waveguide type h01p;line connectors, current collectors h01r;stimulated-emission devices h01s;electromechanical resonators h03h;loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers h04r;electric light sources in general h05b;printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components h05k;use of semiconductor devices in circuits having a particular application, see the subclass for the application) | |
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| 650 | 4 | |a B82Y: Specific uses or applications of nanostructures; measurement or analysis of nanostructures; manufacture or treatment of nanostructures | |
| 650 | 4 | |a G03F: Photomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices; materials therefor; originals therefor; apparatus specially adapted therefor (phototypographic composing devices b41b;photosensitive materials or processes for photographic purposes g03c;electrography, sensitive layers or processes g03g) | |
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