Electronic device and manufacturing method thereof
An electronic device includes a pair of depletion gates, an accumulation gate, and a conductive resonator. The depletion gates are spaced apart from each other. The accumulation gate is over the depletion gates. The conductive resonator is over the depletion gates and the accumulation gate. The conductive resonator includes a first portion, a second portion, and a third portion. The first portion and the second portion are on opposite sides of the accumulation gate. The third portion interconnects the first and second portions of the conductive resonator and across the depletion gates. A bottom surface of the first portion of the conductive resonator is lower than a bottom surface of the accumulation gate..
| Medienart: |
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Patent| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Europäisches Patentamt - (2024) vom: 19. März Zur Gesamtaufnahme - year:2024 |
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| Sprache: |
Englisch |
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| Beteiligte Personen: |
LI JIUN-YUN [VerfasserIn] |
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| Links: |
Volltext [kostenfrei] |
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| Themen: |
Sonstige Themen: |
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| Anmerkungen: |
Source: www.epo.org (no modifications made), First posted: 2024-03-19, Last update posted on www.tib.eu: 2024-04-04, Last updated: 2024-04-09 |
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| Patentnummer: |
US11934916 |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
EPA003148432 |
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| 520 | |a An electronic device includes a pair of depletion gates, an accumulation gate, and a conductive resonator. The depletion gates are spaced apart from each other. The accumulation gate is over the depletion gates. The conductive resonator is over the depletion gates and the accumulation gate. The conductive resonator includes a first portion, a second portion, and a third portion. The first portion and the second portion are on opposite sides of the accumulation gate. The third portion interconnects the first and second portions of the conductive resonator and across the depletion gates. A bottom surface of the first portion of the conductive resonator is lower than a bottom surface of the accumulation gate. | ||
| 650 | 4 | |a G06N: Computer systems based on specific computational models | |
| 650 | 4 | |a H10N | |
| 650 | 4 | |a tec | |
| 650 | 4 | |a phy | |
| 650 | 4 | |a inf | |
| 650 | 4 | |a B82Y: Specific uses or applications of nanostructures; measurement or analysis of nanostructures; manufacture or treatment of nanostructures | |
| 650 | 4 | |a 615 | |
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