Photoelectric detector and preparation method and application thereof
The invention discloses a photoelectric detector and a preparation method and application thereof. The specific structure of the photoelectric detector sequentially comprises a substrate, a metal reflecting layer, an insulating medium layer, a metal nanosphere array, a WS2 two-dimensional material layer and an electrode from bottom to top, the metal nanosphere array is formed by sequentially arranging metal nanospheres with the radius of 80-140 nm at equal intervals, and the distance between sphere centers of every two adjacent metal nanospheres is 290-600 nm. The metal nanosphere array with a specific size and a specific arrangement mode can respond to an external light field with a specific frequency and amplify an electric signal generated by WS2, and when the light field frequency which can be responded by the metal nanosphere array is consistent with the characteristic absorption frequency of the WS2, the WS2 can be absorbed by the metal nanosphere array. The absorption peak of the photoelectric detector provided by the invention in a detection wave band has smaller half-peak width..
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Patent| Erscheinungsjahr: |
2023 |
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| Erschienen: |
2023 |
| Enthalten in: |
Europäisches Patentamt - (2023) vom: 15. Sept. Zur Gesamtaufnahme - year:2023 |
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| Sprache: |
Englisch |
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| Beteiligte Personen: |
YIN QIANXI [VerfasserIn] |
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| Links: |
Volltext [kostenfrei] |
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| Themen: |
Sonstige Themen: |
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| Anmerkungen: |
Source: www.epo.org (no modifications made), First posted: 2023-09-15, Last update posted on www.tib.eu: 2024-03-12, Last updated: 2024-03-15 |
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| Patentnummer: |
CN116759482 |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
EPA000545015 |
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| 500 | |a Source: www.epo.org (no modifications made), First posted: 2023-09-15, Last update posted on www.tib.eu: 2024-03-12, Last updated: 2024-03-15 | ||
| 520 | |a The invention discloses a photoelectric detector and a preparation method and application thereof. The specific structure of the photoelectric detector sequentially comprises a substrate, a metal reflecting layer, an insulating medium layer, a metal nanosphere array, a WS2 two-dimensional material layer and an electrode from bottom to top, the metal nanosphere array is formed by sequentially arranging metal nanospheres with the radius of 80-140 nm at equal intervals, and the distance between sphere centers of every two adjacent metal nanospheres is 290-600 nm. The metal nanosphere array with a specific size and a specific arrangement mode can respond to an external light field with a specific frequency and amplify an electric signal generated by WS2, and when the light field frequency which can be responded by the metal nanosphere array is consistent with the characteristic absorption frequency of the WS2, the WS2 can be absorbed by the metal nanosphere array. The absorption peak of the photoelectric detector provided by the invention in a detection wave band has smaller half-peak width. | ||
| 650 | 4 | |a H01L: Semiconductor devices; electric solid state devices not otherwise provided for (use of semiconductor devices for measuring g01;resistors in general h01c;magnets, inductors, transformers h01f;capacitors in general h01g;electrolytic devices h01g0009000000;batteries, accumulators h01m;waveguides, resonators, or lines of the waveguide type h01p;line connectors, current collectors h01r;stimulated-emission devices h01s;electromechanical resonators h03h;loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers h04r;electric light sources in general h05b;printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components h05k;use of semiconductor devices in circuits having a particular application, see the subclass for the application) | |
| 650 | 4 | |a phy | |
| 650 | 4 | |a elt | |
| 650 | 4 | |a B82Y: Specific uses or applications of nanostructures; measurement or analysis of nanostructures; manufacture or treatment of nanostructures | |
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| 700 | 0 | |a DONG HUAFENG |4 aut | |
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