Solution growth of chalcopyrite Cu(In1−xGax)Se2 single crystals for high open-circuit voltage photovoltaic device
I–III–VI2 Chalcopyrite Cu(In1−x Gax)Se2 (CIGS) has attracted attention as absorbing layer in photovoltaic (PV) device. In this study, we investigated the fundamental properties of CIGS single crystals, and fabricated single crystal-based PV device. CIGS single crystals without secondary phase were successfully grown by In-solvent traveling heater method (THM). The conversion of conduction type from n- to p-type can be observed above 0.3 of Ga ratio x because of high acceptor defect concentration. PV device based on high-quality CIGS bulk single crystal demonstrates high open-circuit voltage of 0.765 V with the efficiency of 12.6%..
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2021 |
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| Erschienen: |
2021 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:40 |
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| Enthalten in: |
High Temperature Materials and Processes - 40(2021), 1, Seite 439-445 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Nagaoka Akira [VerfasserIn] |
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| Links: |
doi.org [kostenfrei] |
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| Themen: |
Chemical technology |
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| doi: |
10.1515/htmp-2021-0047 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
DOAJ07578386X |
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| 520 | |a I–III–VI2 Chalcopyrite Cu(In1−x Gax)Se2 (CIGS) has attracted attention as absorbing layer in photovoltaic (PV) device. In this study, we investigated the fundamental properties of CIGS single crystals, and fabricated single crystal-based PV device. CIGS single crystals without secondary phase were successfully grown by In-solvent traveling heater method (THM). The conversion of conduction type from n- to p-type can be observed above 0.3 of Ga ratio x because of high acceptor defect concentration. PV device based on high-quality CIGS bulk single crystal demonstrates high open-circuit voltage of 0.765 V with the efficiency of 12.6%. | ||
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