紫外光催化辅助SiC抛光过程中化学反应速率的影响 : = Effect of Chemical Reaction Rate in Ultraviolet Photocatalytic Auxiliary SiC Polishing Process
目的为了探究紫外光催化辅助抛光过程中,化学反应速率对SiC化学机械抛光的影响规律。方法通过无光照、光照抛光盘和光照抛光液3种光照方式,研究紫外光催化辅助作用对单晶SiC抛光过程中材料去除率的影响。测量不同条件下光催化反应过程中的氧化还原电位(ORP)值,来表征光催化反应速率,并进行了单晶SiC的紫外光催化辅助抛光实验,考察光催化反应速率对抛光效果的影响规律。结果实验表明,引入紫外光催化辅助作用后,材料去除率提高14%～20%,随着材料去除率的增加,光催化辅助作用对材料去除率的影响程度变小。光照射抛光液方式的材料去除率明显高于光照射抛光盘。不同条件下的抛光结果显示,化学反应速率越快,溶液的ORP值越高,材料去除率越大,表面粗糙度越低。在光照抛光液、H_2O_2体积分数4.5%、TiO_2质量浓度4 g/L、光照强度1500 mW/cm~2、pH=11的条件下,用W0.2的金刚石磨料对SiC抛光120 min后,能够获得表面粗糙度Ra=0.269 nm的光滑表面。结论在单晶SiC的紫外光催化辅助抛光过程中,光催化反应速率越快,溶液ORP值越高,抛光效率越高,表面质量越好。在H_2O_2浓度、TiO_2浓度、光照强度、pH等4个因素中,对抛光效果影响最大的是H_2O_2浓度,光照强度主要影响光催化反应达到稳定的时间。.
The work aims to investigate the effect of chemical reaction rate on SiC chemical mechanical polishing(CMP) in the process of ultraviolet photocatalysis assisted polishing. The effect of ultraviolet catalysis on the material removal rate of(MRR) of polishing wafer was studied by three kinds of irradiation modes: no irradiation, polishing disc irradiation and polishing slurry irradiation. The Oxidation-reduction potential(ORP) value of photocatalytic reaction under different conditions was measured to characterize the photocatalytic reaction rate. The ultraviolet photocatalysis assisted polishing experiment of single crystal SiC wafer was carried out to investigate the effect of photocatalysis rate on polishing performance. From the experimental results, the material removal rate was increased by about 14%～20% with ultraviolet photocatalysis. With the increase of material removal rate, the effect of ultraviolet photocatalysis assistance on material removal rate became smaller. The material removal rate under polishing slurry irradiation was obviously higher than that under polishing disc irradiation. The polishing results under different conditions showed that as the the chemical reaction rate became faster, the ORP value of the solution became higher, the material removal rate became larger, and the surface roughness became lower. Under the conditions of polishing slurry irridation, H_2 O_2 concentration of 4.5 vol%, TiO_2 concentration of 4 g/L, light intensity of 1500 mW/cm~2 and pH11, the smooth surface with roughness of Ra 0.269 nm could be obtained after 120 min polishing with W0.2 diamond abrasive. In the process of ultraviolet photocatalysis assisted polishing of single crystal SiC, with the faster photocatalytic reaction rate, the solution ORP value is higher, the polishing efficiency is larger and the surface quality is better. Among the four factors such as H_2 O_2 concentration, TiO_2 concentration, light intensity and pH, H_2 O_2 concentration has the greatest influence on the polishing effect, and the light intensity mainly affects the time for photocatalytic reaction to achieve stability..
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2019-11-20 2019 |
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| Erschienen: |
2019-11-20 |
| Enthalten in: |
Zur Gesamtaufnahme - year:2019 |
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| Enthalten in: |
Biao mian ji shu - (2019), 11 vom: 20. Nov., Seite 148-158 Original Letters: Enthalten in 表面技术 (DE-600)2991503-X (DE-600)2991503-X 重庆市 |
| Reihe: |
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| Sprache: |
Chinesisch |
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| Weiterer Titel: |
Effect of Chemical Reaction Rate in Ultraviolet Photocatalytic Auxiliary SiC Polishing Process |
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| Beteiligte Personen: |
路家斌 [VerfasserIn] |
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| Links: |
oversea.cnki.net [lizenzpflichtig] |
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| Anmerkungen: |
Author info:LU Jia-bin;XIONG Qiang;YAN Qiu-sheng;WANG Xin;LIAO Bo-tao;School of Electromechanical Engineering,Guangdong University of Technology;Guangdong Nanogrind Technology Co.,Ltd |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
CAJ643115730 |
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| 245 | 1 | 0 | |a 紫外光催化辅助SiC抛光过程中化学反应速率的影响 |b = Effect of Chemical Reaction Rate in Ultraviolet Photocatalytic Auxiliary SiC Polishing Process |
| 246 | 3 | 1 | |a Effect of Chemical Reaction Rate in Ultraviolet Photocatalytic Auxiliary SiC Polishing Process |
| 264 | 1 | |c 2019-11-20 | |
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| 337 | |a Computermedien |b c |2 rdamedia | ||
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| 500 | |a Author info:LU Jia-bin;XIONG Qiang;YAN Qiu-sheng;WANG Xin;LIAO Bo-tao;School of Electromechanical Engineering,Guangdong University of Technology;Guangdong Nanogrind Technology Co.,Ltd | ||
| 520 | |a 目的为了探究紫外光催化辅助抛光过程中,化学反应速率对SiC化学机械抛光的影响规律。方法通过无光照、光照抛光盘和光照抛光液3种光照方式,研究紫外光催化辅助作用对单晶SiC抛光过程中材料去除率的影响。测量不同条件下光催化反应过程中的氧化还原电位(ORP)值,来表征光催化反应速率,并进行了单晶SiC的紫外光催化辅助抛光实验,考察光催化反应速率对抛光效果的影响规律。结果实验表明,引入紫外光催化辅助作用后,材料去除率提高14%～20%,随着材料去除率的增加,光催化辅助作用对材料去除率的影响程度变小。光照射抛光液方式的材料去除率明显高于光照射抛光盘。不同条件下的抛光结果显示,化学反应速率越快,溶液的ORP值越高,材料去除率越大,表面粗糙度越低。在光照抛光液、H_2O_2体积分数4.5%、TiO_2质量浓度4 g/L、光照强度1500 mW/cm~2、pH=11的条件下,用W0.2的金刚石磨料对SiC抛光120 min后,能够获得表面粗糙度Ra=0.269 nm的光滑表面。结论在单晶SiC的紫外光催化辅助抛光过程中,光催化反应速率越快,溶液ORP值越高,抛光效率越高,表面质量越好。在H_2O_2浓度、TiO_2浓度、光照强度、pH等4个因素中,对抛光效果影响最大的是H_2O_2浓度,光照强度主要影响光催化反应达到稳定的时间。 | ||
| 520 | |a The work aims to investigate the effect of chemical reaction rate on SiC chemical mechanical polishing(CMP) in the process of ultraviolet photocatalysis assisted polishing. The effect of ultraviolet catalysis on the material removal rate of(MRR) of polishing wafer was studied by three kinds of irradiation modes: no irradiation, polishing disc irradiation and polishing slurry irradiation. The Oxidation-reduction potential(ORP) value of photocatalytic reaction under different conditions was measured to characterize the photocatalytic reaction rate. The ultraviolet photocatalysis assisted polishing experiment of single crystal SiC wafer was carried out to investigate the effect of photocatalysis rate on polishing performance. From the experimental results, the material removal rate was increased by about 14%～20% with ultraviolet photocatalysis. With the increase of material removal rate, the effect of ultraviolet photocatalysis assistance on material removal rate became smaller. The material removal rate under polishing slurry irradiation was obviously higher than that under polishing disc irradiation. The polishing results under different conditions showed that as the the chemical reaction rate became faster, the ORP value of the solution became higher, the material removal rate became larger, and the surface roughness became lower. Under the conditions of polishing slurry irridation, H_2 O_2 concentration of 4.5 vol%, TiO_2 concentration of 4 g/L, light intensity of 1500 mW/cm~2 and pH11, the smooth surface with roughness of Ra 0.269 nm could be obtained after 120 min polishing with W0.2 diamond abrasive. In the process of ultraviolet photocatalysis assisted polishing of single crystal SiC, with the faster photocatalytic reaction rate, the solution ORP value is higher, the polishing efficiency is larger and the surface quality is better. Among the four factors such as H_2 O_2 concentration, TiO_2 concentration, light intensity and pH, H_2 O_2 concentration has the greatest influence on the polishing effect, and the light intensity mainly affects the time for photocatalytic reaction to achieve stability. | ||
| 610 | 2 | 4 | |a 广东工业大学机电工程学院 |
| 610 | 2 | 4 | |a 广东纳诺格莱科技有限公司 |
| 650 | 4 | |a 化学动力学、催化作用 | |
| 650 | 4 | |a 物理化学（理论化学）、化学物理 | |
| 650 | 4 | |a 化学 | |
| 650 | 4 | |a 数理科学和化学 | |
| 650 | 4 | |a 光化学 | |
| 650 | 4 | |a 光化学、辐射化学、超声波作用的化学过程 | |
| 650 | 4 | |a 硅及其无机化合物 | |
| 650 | 4 | |a 第Ⅳ族非金属元素及其无机化合物 | |
| 650 | 4 | |a 非金属无机化合物化学工业 | |
| 650 | 4 | |a 化学工业 | |
| 650 | 4 | |a 工业技术 | |
| 650 | 4 | |a Chemistry | |
| 650 | 4 | |a Inorganic Chemical Industry | |
| 650 | 4 | |a 理工B(化学化工冶金环境矿业) | |
| 650 | 4 | |a Chemistry/ Metallurgy/ Environment/ Mine Industry | |
| 650 | 4 | |a 紫外光催化 | |
| 650 | 4 | |a 单晶SiC | |
| 650 | 4 | |a 氧化还原电位 | |
| 650 | 4 | |a 化学反应速率 | |
| 650 | 4 | |a 抛光效果 | |
| 650 | 4 | |a ultraviolet photocatalysis | |
| 650 | 4 | |a single-crystal silicon carbide | |
| 650 | 4 | |a oxidation-reduction potential | |
| 650 | 4 | |a chemical reaction rate | |
| 650 | 4 | |a polishing effects | |
| 700 | 0 | |a 熊强 |4 oth | |
| 700 | 0 | |a 阎秋生 |4 oth | |
| 700 | 0 | |a 王鑫 |4 oth | |
| 700 | 0 | |a 廖博涛 |4 oth | |
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