Chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications : = Chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications
Two-dimensional transition metal oxychlorides(MOCl, M = Fe, Cr, V, Ti, Sc) with the metaloxygen plane sandwiched by two layers of chloride ions possess many exotic physical properties. Nevertheless,it is of great challenge to grow two-dimensional single-crystal MOCl because polyvalent nature of transition metal elements usually gives rise to mixed oxyhalides compounds with distinct physical properties. Here, we take VOCl as an example to present a solution for synthesizing 2 D freestanding MOCl with various thicknesses through chemical vapor deposition(CVD) method. The single crystal and elementary composition as well as elements ratio of as-grown samples have been characterized through measurements of X-ray diffraction, X-ray photoelectron spectroscopy and energy-dispersive spectroscopy, respectively. Furthermore, we demonstrate that 2 D VOCl-based memristive devices show low power consumption and excellent device reliability due to the layered-structure and electrically insulating properties of 2 D VOCl flakes. Besides, we utilize the feature of multilevel resistive switching that memristive devices exhibit to emulate depression and potentiation of synaptic plasticity. This method developed in this study may open up a new avenue for the growth of 2 D MOCl with single crystal and pave the way for high-performance electronic applications..
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2019-12-01 2019 |
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| Erschienen: |
2019-12-01 |
| Enthalten in: |
Zur Gesamtaufnahme - year:2019 |
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| Enthalten in: |
Science China / Information sciences - (2019), 12 vom: 01. Dez., Seite 149-163 Original Letters: Enthalten in (DE-576)322138388 (DE-576)322138388 |
| Reihe: |
China Academic Journals (CAJ), I, 电子技术及信息科学 = Electronic Technology & Information Science |
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| Sprache: |
Chinesisch |
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| Weiterer Titel: |
Chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications |
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| Beteiligte Personen: |
Shengnan YAN [VerfasserIn] |
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| Links: |
oversea.cnki.net [lizenzpflichtig] |
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| Anmerkungen: |
Author info:Shengnan YAN;Pengfei WANG;Chen-Yu WANG;Tao XU;Zhuan LI;Tianjun CAO;Moyu CHEN;Chen PAN;Bin CHENG;Litao SUN;Shi-Jun LIANG;Feng MIAO;National Laboratory of Solid State Microstructures, School of Physics,Collaborative Innovation Center of Advanced Microstructures, Nanjing University;Key Laboratory of MEMS of Ministry of Education, Southeast University |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
CAJ643020268 |
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| 245 | 1 | 0 | |a Chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications |b = Chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications |
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| 500 | |a Author info:Shengnan YAN;Pengfei WANG;Chen-Yu WANG;Tao XU;Zhuan LI;Tianjun CAO;Moyu CHEN;Chen PAN;Bin CHENG;Litao SUN;Shi-Jun LIANG;Feng MIAO;National Laboratory of Solid State Microstructures, School of Physics,Collaborative Innovation Center of Advanced Microstructures, Nanjing University;Key Laboratory of MEMS of Ministry of Education, Southeast University | ||
| 520 | |a Two-dimensional transition metal oxychlorides(MOCl, M = Fe, Cr, V, Ti, Sc) with the metaloxygen plane sandwiched by two layers of chloride ions possess many exotic physical properties. Nevertheless,it is of great challenge to grow two-dimensional single-crystal MOCl because polyvalent nature of transition metal elements usually gives rise to mixed oxyhalides compounds with distinct physical properties. Here, we take VOCl as an example to present a solution for synthesizing 2 D freestanding MOCl with various thicknesses through chemical vapor deposition(CVD) method. The single crystal and elementary composition as well as elements ratio of as-grown samples have been characterized through measurements of X-ray diffraction, X-ray photoelectron spectroscopy and energy-dispersive spectroscopy, respectively. Furthermore, we demonstrate that 2 D VOCl-based memristive devices show low power consumption and excellent device reliability due to the layered-structure and electrically insulating properties of 2 D VOCl flakes. Besides, we utilize the feature of multilevel resistive switching that memristive devices exhibit to emulate depression and potentiation of synaptic plasticity. This method developed in this study may open up a new avenue for the growth of 2 D MOCl with single crystal and pave the way for high-performance electronic applications. | ||
| 610 | 2 | 4 | |a National Laboratory of Solid State Microstructures, School of Physics,Collaborative Innovation Center of Advanced Microstructures, Nanjing University |
| 610 | 2 | 4 | |a Key Laboratory of MEMS of Ministry of Education, Southeast University |
| 650 | 4 | |a 氯及其化合物 | |
| 650 | 4 | |a 卤素及其化合物 | |
| 650 | 4 | |a 非金属无机化合物化学工业 | |
| 650 | 4 | |a 化学工业 | |
| 650 | 4 | |a 工业技术 | |
| 650 | 4 | |a 电子元件、组件 | |
| 650 | 4 | |a 无线电电子学、电信技术 | |
| 650 | 4 | |a Inorganic Chemical Industry | |
| 650 | 4 | |a Wireless Electronics | |
| 650 | 4 | |a 电子技术及信息科学 | |
| 650 | 4 | |a Electronic Technology & Information Science | |
| 650 | 4 | |a 理工B(化学化工冶金环境矿业) | |
| 650 | 4 | |a Chemistry/ Metallurgy/ Environment/ Mine Industry | |
| 650 | 4 | |a transition metal oxychlorides | |
| 650 | 4 | |a chemical vapor deposition | |
| 650 | 4 | |a freestanding | |
| 650 | 4 | |a memristive device | |
| 650 | 4 | |a neuromorphic computing | |
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| 700 | 0 | |a Litao SUN |4 oth | |
| 700 | 0 | |a Shi-Jun LIANG |4 oth | |
| 700 | 0 | |a Feng MIAO |4 oth | |
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