High-Pressure O2 Annealing Enhances the Crystallinity of Ultrawide-Band-Gap Sesquioxides Combined with Graphene for Vacuum-Ultraviolet Photovoltaic Detection
(AlxGa1-x)2O3 is emerging as a promising wide-band-gap sesquioxide for vacuum-ultraviolet (VUV, 10-200 nm) photodetectors and high-power field-effect transistors. However, how the key parameters such as the band gap and crystalline phase of the (AlxGa1-x)2O3-based device vary with stoichiometry has not been explicitly defined, which is due to the unclear underlying mechanism of the Al local coordination environment. In this work, a high-pressure O2 (20 atm) annealing (HPOA) strategy that can significantly improve the crystallinity of β-(AlxGa1-x)2O3 and achieve a tunable optical band gap was proposed, facilitating the revelation of the local structure of Al3+ varying with Al content and the kinetic mechanism of Al3+ diffusion. By combining the as-HPOA-treated single-crystalline β-(Al0.69Ga0.31)2O3 films with p-type graphene (p-Gr), which serves as a transparent conductor, a VUV photovoltaic detector is fabricated, showing an improved photovoltage (0.80 V) and fast temporal response (2.1 μs). All of these findings provide a rewarding and important strategy for enhancing the band-gap tunability of sesquioxides, as well as the flexibility of zero-power-consumption photodetectors.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2021 |
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Erschienen: |
2021 |
Enthalten in: |
Zur Gesamtaufnahme - volume:13 |
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Enthalten in: |
ACS applied materials & interfaces - 13(2021), 14 vom: 14. Apr., Seite 16660-16668 |
Sprache: |
Englisch |
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Beteiligte Personen: |
Li, Titao [VerfasserIn] |
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Links: |
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Themen: |
Gallium oxide |
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Anmerkungen: |
Date Revised 15.04.2021 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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doi: |
10.1021/acsami.1c00429 |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
NLM323429092 |
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520 | |a (AlxGa1-x)2O3 is emerging as a promising wide-band-gap sesquioxide for vacuum-ultraviolet (VUV, 10-200 nm) photodetectors and high-power field-effect transistors. However, how the key parameters such as the band gap and crystalline phase of the (AlxGa1-x)2O3-based device vary with stoichiometry has not been explicitly defined, which is due to the unclear underlying mechanism of the Al local coordination environment. In this work, a high-pressure O2 (20 atm) annealing (HPOA) strategy that can significantly improve the crystallinity of β-(AlxGa1-x)2O3 and achieve a tunable optical band gap was proposed, facilitating the revelation of the local structure of Al3+ varying with Al content and the kinetic mechanism of Al3+ diffusion. By combining the as-HPOA-treated single-crystalline β-(Al0.69Ga0.31)2O3 films with p-type graphene (p-Gr), which serves as a transparent conductor, a VUV photovoltaic detector is fabricated, showing an improved photovoltage (0.80 V) and fast temporal response (2.1 μs). All of these findings provide a rewarding and important strategy for enhancing the band-gap tunability of sesquioxides, as well as the flexibility of zero-power-consumption photodetectors | ||
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700 | 1 | |a Zhu, Yanming |e verfasserin |4 aut | |
700 | 1 | |a Jia, Lemin |e verfasserin |4 aut | |
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700 | 1 | |a Huang, Feng |e verfasserin |4 aut | |
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