Ruddlesden-Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors
© 2020 Wiley-VCH GmbH..
Controlling the morphology of metal halide perovskite layers during processing is critical for the manufacturing of optoelectronics. Here, a strategy to control the microstructure of solution-processed layered Ruddlesden-Popper-phase perovskite films based on phenethylammonium lead bromide ((PEA)2 PbBr4 ) is reported. The method relies on the addition of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8 -BTBT) into the perovskite formulation, where it facilitates the formation of large, near-single-crystalline-quality platelet-like (PEA)2 PbBr4 domains overlaid by a ≈5-nm-thin C8 -BTBT layer. Transistors with (PEA)2 PbBr4 /C8 -BTBT channels exhibit an unexpectedly large hysteresis window between forward and return bias sweeps. Material and device analysis combined with theoretical calculations suggest that the C8 -BTBT-rich phase acts as the hole-transporting channel, while the quantum wells in (PEA)2 PbBr4 act as the charge storage element where carriers from the channel are injected, stored, or extracted via tunneling. When tested as a non-volatile memory, the devices exhibit a record memory window (>180 V), a high erase/write channel current ratio (104 ), good data retention, and high endurance (>104 cycles). The results here highlight a new memory device concept for application in large-area electronics, while the growth technique can potentially be exploited for the development of other optoelectronic devices including solar cells, photodetectors, and light-emitting diodes.
| Medienart: |
E-Artikel |
|---|
| Erscheinungsjahr: |
2021 |
|---|---|
| Erschienen: |
2021 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:33 |
|---|---|
| Enthalten in: |
Advanced materials (Deerfield Beach, Fla.) - 33(2021), 7 vom: 14. Feb., Seite e2003137 |
| Sprache: |
Englisch |
|---|
| Beteiligte Personen: |
Gedda, Murali [VerfasserIn] |
|---|
| Links: |
|---|
| Themen: |
Additive engineering |
|---|
| Anmerkungen: |
Date Revised 17.02.2021 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
|---|
| doi: |
10.1002/adma.202003137 |
|---|
| funding: |
|
|---|---|
| Förderinstitution / Projekttitel: |
|
| PPN (Katalog-ID): |
NLM319462145 |
|---|
| LEADER | 01000naa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM319462145 | ||
| 003 | DE-627 | ||
| 005 | 20231225171508.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 231225s2021 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1002/adma.202003137 |2 doi | |
| 028 | 5 | 2 | |a pubmed24n1064.xml |
| 035 | |a (DE-627)NLM319462145 | ||
| 035 | |a (NLM)33382153 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Gedda, Murali |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Ruddlesden-Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors |
| 264 | 1 | |c 2021 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Revised 17.02.2021 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a © 2020 Wiley-VCH GmbH. | ||
| 520 | |a Controlling the morphology of metal halide perovskite layers during processing is critical for the manufacturing of optoelectronics. Here, a strategy to control the microstructure of solution-processed layered Ruddlesden-Popper-phase perovskite films based on phenethylammonium lead bromide ((PEA)2 PbBr4 ) is reported. The method relies on the addition of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8 -BTBT) into the perovskite formulation, where it facilitates the formation of large, near-single-crystalline-quality platelet-like (PEA)2 PbBr4 domains overlaid by a ≈5-nm-thin C8 -BTBT layer. Transistors with (PEA)2 PbBr4 /C8 -BTBT channels exhibit an unexpectedly large hysteresis window between forward and return bias sweeps. Material and device analysis combined with theoretical calculations suggest that the C8 -BTBT-rich phase acts as the hole-transporting channel, while the quantum wells in (PEA)2 PbBr4 act as the charge storage element where carriers from the channel are injected, stored, or extracted via tunneling. When tested as a non-volatile memory, the devices exhibit a record memory window (>180 V), a high erase/write channel current ratio (104 ), good data retention, and high endurance (>104 cycles). The results here highlight a new memory device concept for application in large-area electronics, while the growth technique can potentially be exploited for the development of other optoelectronic devices including solar cells, photodetectors, and light-emitting diodes | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a additive engineering | |
| 650 | 4 | |a floating-gate transistors | |
| 650 | 4 | |a non-volatile memory | |
| 650 | 4 | |a perovskite-organic blends | |
| 650 | 4 | |a two-dimensional perovskites | |
| 700 | 1 | |a Yengel, Emre |e verfasserin |4 aut | |
| 700 | 1 | |a Faber, Hendrik |e verfasserin |4 aut | |
| 700 | 1 | |a Paulus, Fabian |e verfasserin |4 aut | |
| 700 | 1 | |a Kreß, Joshua A |e verfasserin |4 aut | |
| 700 | 1 | |a Tang, Ming-Chun |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Siyuan |e verfasserin |4 aut | |
| 700 | 1 | |a Hacker, Christina A |e verfasserin |4 aut | |
| 700 | 1 | |a Kumar, Prashant |e verfasserin |4 aut | |
| 700 | 1 | |a Naphade, Dipti R |e verfasserin |4 aut | |
| 700 | 1 | |a Vaynzof, Yana |e verfasserin |4 aut | |
| 700 | 1 | |a Volonakis, George |e verfasserin |4 aut | |
| 700 | 1 | |a Giustino, Feliciano |e verfasserin |4 aut | |
| 700 | 1 | |a Anthopoulos, Thomas D |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Advanced materials (Deerfield Beach, Fla.) |d 1998 |g 33(2021), 7 vom: 14. Feb., Seite e2003137 |w (DE-627)NLM098206397 |x 1521-4095 |7 nnns |
| 773 | 1 | 8 | |g volume:33 |g year:2021 |g number:7 |g day:14 |g month:02 |g pages:e2003137 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1002/adma.202003137 |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 33 |j 2021 |e 7 |b 14 |c 02 |h e2003137 | ||