Single-Crystalline All-Oxide α-γ-β Heterostructures for Deep-Ultraviolet Photodetection
Recent advancements in gallium oxide (Ga2O3)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing single-crystalline Ga2O3 layers on native substrates for high conductivity and visible-light transparency, presented and investigated herein is a single-crystalline β-Ga2O3 layer grown on an α-Al2O3 substrate through an interfacial γ-In2O3 layer. The single-crystalline transparent conductive oxide layer made of wafer-scalable γ-In2O3 provides high carrier transport, visible-light transparency, and antioxidation properties that are critical for realizing vertically oriented heterostructures for transparent oxide photonic platforms. Physical characterization based on X-ray diffraction and high-resolution transmission electron microscopy imaging confirms the single-crystalline nature of the grown films and the crystallographic orientation relationships among the monoclinic β-Ga2O3, cubic γ-In2O3, and trigonal α-Al2O3, while the elemental composition and sharp interfaces across the heterostructure are confirmed by Rutherford backscattering spectrometry. Furthermore, the energy-band offsets are determined by X-ray photoelectron spectroscopy at the β-Ga2O3/γ-In2O3 interface, elucidating a type-II heterojunction with conduction- and valence-band offsets of 0.16 and 1.38 eV, respectively. Based on the single-crystalline β-Ga2O3/γ-In2O3/α-Al2O3 all-oxide heterostructure, a vertically oriented DUV photodetector is fabricated that exhibits a high photoresponsivity of 94.3 A/W, an external quantum efficiency of 4.6 × 104%, and a specific detectivity of 3.09 × 1012 Jones at 250 nm. The present demonstration lays a strong foundation for and paves the way to future all-oxide-based transparent photonic platforms.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2020 |
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Erschienen: |
2020 |
Enthalten in: |
Zur Gesamtaufnahme - volume:12 |
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Enthalten in: |
ACS applied materials & interfaces - 12(2020), 48 vom: 02. Dez., Seite 53932-53941 |
Sprache: |
Englisch |
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Beteiligte Personen: |
Li, Kuang-Hui [VerfasserIn] |
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Links: |
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Themen: |
All-oxide photonics |
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Anmerkungen: |
Date Revised 05.04.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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doi: |
10.1021/acsami.0c15398 |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
NLM317704656 |
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520 | |a Recent advancements in gallium oxide (Ga2O3)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing single-crystalline Ga2O3 layers on native substrates for high conductivity and visible-light transparency, presented and investigated herein is a single-crystalline β-Ga2O3 layer grown on an α-Al2O3 substrate through an interfacial γ-In2O3 layer. The single-crystalline transparent conductive oxide layer made of wafer-scalable γ-In2O3 provides high carrier transport, visible-light transparency, and antioxidation properties that are critical for realizing vertically oriented heterostructures for transparent oxide photonic platforms. Physical characterization based on X-ray diffraction and high-resolution transmission electron microscopy imaging confirms the single-crystalline nature of the grown films and the crystallographic orientation relationships among the monoclinic β-Ga2O3, cubic γ-In2O3, and trigonal α-Al2O3, while the elemental composition and sharp interfaces across the heterostructure are confirmed by Rutherford backscattering spectrometry. Furthermore, the energy-band offsets are determined by X-ray photoelectron spectroscopy at the β-Ga2O3/γ-In2O3 interface, elucidating a type-II heterojunction with conduction- and valence-band offsets of 0.16 and 1.38 eV, respectively. Based on the single-crystalline β-Ga2O3/γ-In2O3/α-Al2O3 all-oxide heterostructure, a vertically oriented DUV photodetector is fabricated that exhibits a high photoresponsivity of 94.3 A/W, an external quantum efficiency of 4.6 × 104%, and a specific detectivity of 3.09 × 1012 Jones at 250 nm. The present demonstration lays a strong foundation for and paves the way to future all-oxide-based transparent photonic platforms | ||
650 | 4 | |a Journal Article | |
650 | 4 | |a all-oxide photonics | |
650 | 4 | |a aluminum oxide (Al2O3) | |
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650 | 4 | |a gallium oxide (Ga2O3) | |
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700 | 1 | |a Kang, Chun Hong |e verfasserin |4 aut | |
700 | 1 | |a Min, Jung-Hong |e verfasserin |4 aut | |
700 | 1 | |a Alfaraj, Nasir |e verfasserin |4 aut | |
700 | 1 | |a Liang, Jian-Wei |e verfasserin |4 aut | |
700 | 1 | |a Braic, Laurentiu |e verfasserin |4 aut | |
700 | 1 | |a Guo, Zaibing |e verfasserin |4 aut | |
700 | 1 | |a Hedhili, Mohamed Nejib |e verfasserin |4 aut | |
700 | 1 | |a Ng, Tien Khee |e verfasserin |4 aut | |
700 | 1 | |a Ooi, Boon S |e verfasserin |4 aut | |
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