Atomic Layer Deposition Seeded Growth of Rutile SnO2 Nanowires on Versatile Conducting Substrates
Extended and oriented rutile nanowires (NWs) hold great promise for numerous applications because of their various tunable physicochemical properties in air and/or solution media, but their direct synthesis on a wide range of conducting substrates remains a significant challenge. Their device performance is governed by relevant NW geometries that cannot be fully controlled to date by varying bulk synthetic conditions. Herein, orientation engineering of rutile SnO2 NWs on a variety of conducting substrates by atomic layer deposition (ALD) seeding has been investigated. The seeded growth controls the nucleation event of the NW, and thicknesses and crystallographic properties of seed layers are the key parameters toward tuning the NW characteristics. The seed layers on carbon cloth produce NWs with highly enhanced electrochemically active surface area, which would show efficient electrochemical CO2 reduction. In addition, the hierarchical architecture resulted from the seeded growth of NWs on SnO2 nanosheets allows thin layers of BiVO4, forming a heterojunction photoanode, which shows a record charge separation efficiency of 96.6% and a charge-transfer efficiency of 90.2% at 1.23 V versus the reversible hydrogen electrode among, to date, the reported BiVO4-based photoanodes for water oxidation. Our study illustrates that such a versatile interfacial engineering effort by the ALD technique would be promising for further wide range of practical applications.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:12 |
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| Enthalten in: |
ACS applied materials & interfaces - 12(2020), 43 vom: 28. Okt., Seite 48486-48494 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Bera, Susanta [VerfasserIn] |
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| Links: |
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| Themen: |
Atomic layer deposition |
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| Anmerkungen: |
Date Revised 29.10.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acsami.0c11107 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM316479225 |
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| 520 | |a Extended and oriented rutile nanowires (NWs) hold great promise for numerous applications because of their various tunable physicochemical properties in air and/or solution media, but their direct synthesis on a wide range of conducting substrates remains a significant challenge. Their device performance is governed by relevant NW geometries that cannot be fully controlled to date by varying bulk synthetic conditions. Herein, orientation engineering of rutile SnO2 NWs on a variety of conducting substrates by atomic layer deposition (ALD) seeding has been investigated. The seeded growth controls the nucleation event of the NW, and thicknesses and crystallographic properties of seed layers are the key parameters toward tuning the NW characteristics. The seed layers on carbon cloth produce NWs with highly enhanced electrochemically active surface area, which would show efficient electrochemical CO2 reduction. In addition, the hierarchical architecture resulted from the seeded growth of NWs on SnO2 nanosheets allows thin layers of BiVO4, forming a heterojunction photoanode, which shows a record charge separation efficiency of 96.6% and a charge-transfer efficiency of 90.2% at 1.23 V versus the reversible hydrogen electrode among, to date, the reported BiVO4-based photoanodes for water oxidation. Our study illustrates that such a versatile interfacial engineering effort by the ALD technique would be promising for further wide range of practical applications | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a SnO2 nanowires | |
| 650 | 4 | |a atomic layer deposition | |
| 650 | 4 | |a catalysis | |
| 650 | 4 | |a hydrothermal growth | |
| 650 | 4 | |a versatile substrates | |
| 700 | 1 | |a Lee, Sol A |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, Woo-Jae |e verfasserin |4 aut | |
| 700 | 1 | |a Ilka, Mahdi |e verfasserin |4 aut | |
| 700 | 1 | |a Kim, Ji-Hee |e verfasserin |4 aut | |
| 700 | 1 | |a Kim, Chang-Min |e verfasserin |4 aut | |
| 700 | 1 | |a Khan, Hasmat |e verfasserin |4 aut | |
| 700 | 1 | |a Jang, Ho Won |e verfasserin |4 aut | |
| 700 | 1 | |a Kwon, Se-Hun |e verfasserin |4 aut | |
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