Appearance of V-encapsulated tetragonal prism motifs in VSi10- and VSi11- clusters

The structural and electronic properties of V-doped silicon clusters, VSi10-/0 and VSi11-/0, were investigated by using mass-selected anion photoelectron spectroscopy in combination with theoretical calculations. Photoelectron spectroscopy of VSi10- and VSi11- clusters with spectral similarity reveals that the two cluster structures resemble each other. Interestingly, theoretical calculation studies provide definitive evidence of the global minima for the two clusters to be V-encapsulated tetragonal prism motifs with extra Si atoms bicapped and tricapped, respectively. The enhanced stability of the tetragonal prism unit in VSi10- and VSi11- is due to the strong interactions between 3d (V) and 3p (Si) orbitals, and more charge transfers from the Sin framework to the encapsulated V atom. The tetragonal prism unit possessed by both the VSi10- and VSi11- clusters is observed for the first time in the current work, and may offer new ideas in developing components for Si-based nanodevices.

Medienart:

E-Artikel

Erscheinungsjahr:

2020

Erschienen:

2020

Enthalten in:

Zur Gesamtaufnahme - volume:22

Enthalten in:

Physical chemistry chemical physics : PCCP - 22(2020), 40 vom: 21. Okt., Seite 22989-22996

Sprache:

Englisch

Beteiligte Personen:

Zhang, Li-Juan [VerfasserIn]
Yang, Bin [VerfasserIn]
Li, Da-Zhi [VerfasserIn]
Farooq, Umar [VerfasserIn]
Xu, Xi-Ling [VerfasserIn]
Zheng, Wei-Jun [VerfasserIn]
Xu, Hong-Guang [VerfasserIn]

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Journal Article

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Date Revised 22.10.2020

published: Print

Citation Status PubMed-not-MEDLINE

doi:

10.1039/d0cp04101g

funding:

Förderinstitution / Projekttitel:

PPN (Katalog-ID):

NLM316005614