Electrical Conduction Characteristic of a 2D MXene Device with Cu/Cr2C/TiN Structure Based on Density Functional Theory
The electronic structure and the corresponding electrical conductive behavior of the Cu/Cr2C/TiN stack were assessed according to a newly developed first-principle model based on density functional theory. Using an additional Cr2C layer provides the metal-like characteristic of the Cu/Cr2C/TiN stack with much larger electrical conduction coefficients (i.e., mobility, diffusivity, and electrical conductivity) than the conventional Ag/Ti3C2/Pt stack due to the lower activation energy. This device is therefore capable of offering faster switching speeds, lower programming voltage, and better stability and durability than the memristor device with conventional Ti3C2 MXene.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:13 |
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| Enthalten in: |
Materials (Basel, Switzerland) - 13(2020), 17 vom: 20. Aug. |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Wang, Lei [VerfasserIn] |
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| Links: |
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| Anmerkungen: |
Date Revised 01.10.2020 published: Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.3390/ma13173671 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM313989516 |
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| 100 | 1 | |a Wang, Lei |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Electrical Conduction Characteristic of a 2D MXene Device with Cu/Cr2C/TiN Structure Based on Density Functional Theory |
| 264 | 1 | |c 2020 | |
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| 500 | |a Date Revised 01.10.2020 | ||
| 500 | |a published: Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a The electronic structure and the corresponding electrical conductive behavior of the Cu/Cr2C/TiN stack were assessed according to a newly developed first-principle model based on density functional theory. Using an additional Cr2C layer provides the metal-like characteristic of the Cu/Cr2C/TiN stack with much larger electrical conduction coefficients (i.e., mobility, diffusivity, and electrical conductivity) than the conventional Ag/Ti3C2/Pt stack due to the lower activation energy. This device is therefore capable of offering faster switching speeds, lower programming voltage, and better stability and durability than the memristor device with conventional Ti3C2 MXene | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a Cr2C | |
| 650 | 4 | |a MXene | |
| 650 | 4 | |a first-principle study | |
| 650 | 4 | |a memristor | |
| 700 | 1 | |a Wen, Jing |e verfasserin |4 aut | |
| 700 | 1 | |a Jiang, Yuan |e verfasserin |4 aut | |
| 700 | 1 | |a Ou, Qiaofeng |e verfasserin |4 aut | |
| 700 | 1 | |a Yu, Lei |e verfasserin |4 aut | |
| 700 | 1 | |a Xiong, Bang-Shu |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, Bingxing |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Chao |e verfasserin |4 aut | |
| 700 | 1 | |a Tong, Yi |e verfasserin |4 aut | |
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| 773 | 1 | 8 | |g volume:13 |g year:2020 |g number:17 |g day:20 |g month:08 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.3390/ma13173671 |3 Volltext |
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