Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6
Polar van der Waals chalcogenophosphates exhibit unique properties, such as negative electrostriction and multi-well ferrielectricity, and enable combining dielectric and 2D electronic materials. Using low temperature piezoresponse force microscopy, we revealed coexistence of piezoelectric and non-piezoelectric phases in CuInP2Se6, forming unusual domain walls with enhanced piezoelectric response. From systematic imaging experiments we have inferred the formation of a partially polarized antiferroelectric state, with inclusions of structurally distinct ferrielectric domains enclosed by the corresponding phase boundaries. The assignment is strongly supported by optical spectroscopies and density-functional-theory calculations. Enhanced piezoresponse at the ferrielectric/antiferroelectric phase boundary and the ability to manipulate this entity with electric field on the nanoscale expand the existing phenomenology of functional domain walls. At the same time, phase-coexistence in chalcogenophosphates may lead to rational strategies for incorporation of ferroic functionality into van der Waals heterostructures, with stronger resilience toward detrimental size-effects.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:11 |
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| Enthalten in: |
Nature communications - 11(2020), 1 vom: 17. Juli, Seite 3623 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Dziaugys, Andrius [VerfasserIn] |
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| Anmerkungen: |
Date Revised 17.07.2021 published: Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1038/s41467-020-17137-0 |
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NLM312573685 |
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| 520 | |a Polar van der Waals chalcogenophosphates exhibit unique properties, such as negative electrostriction and multi-well ferrielectricity, and enable combining dielectric and 2D electronic materials. Using low temperature piezoresponse force microscopy, we revealed coexistence of piezoelectric and non-piezoelectric phases in CuInP2Se6, forming unusual domain walls with enhanced piezoelectric response. From systematic imaging experiments we have inferred the formation of a partially polarized antiferroelectric state, with inclusions of structurally distinct ferrielectric domains enclosed by the corresponding phase boundaries. The assignment is strongly supported by optical spectroscopies and density-functional-theory calculations. Enhanced piezoresponse at the ferrielectric/antiferroelectric phase boundary and the ability to manipulate this entity with electric field on the nanoscale expand the existing phenomenology of functional domain walls. At the same time, phase-coexistence in chalcogenophosphates may lead to rational strategies for incorporation of ferroic functionality into van der Waals heterostructures, with stronger resilience toward detrimental size-effects | ||
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| 700 | 1 | |a Tao, Lei |e verfasserin |4 aut | |
| 700 | 1 | |a Puretzky, Alexander |e verfasserin |4 aut | |
| 700 | 1 | |a Feng, Tianli |e verfasserin |4 aut | |
| 700 | 1 | |a O'Hara, Andrew |e verfasserin |4 aut | |
| 700 | 1 | |a Neumayer, Sabine |e verfasserin |4 aut | |
| 700 | 1 | |a Chyasnavichyus, Marius |e verfasserin |4 aut | |
| 700 | 1 | |a Eliseev, Eugene A |e verfasserin |4 aut | |
| 700 | 1 | |a Banys, Juras |e verfasserin |4 aut | |
| 700 | 1 | |a Vysochanskii, Yulian |e verfasserin |4 aut | |
| 700 | 1 | |a Ye, Feng |e verfasserin |4 aut | |
| 700 | 1 | |a Chakoumakos, Bryan C |e verfasserin |4 aut | |
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| 700 | 1 | |a McGuire, Michael A |e verfasserin |4 aut | |
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| 700 | 1 | |a Pantelides, Sokrates T |e verfasserin |4 aut | |
| 700 | 1 | |a Morozovska, Anna N |e verfasserin |4 aut | |
| 700 | 1 | |a Maksymovych, Petro |e verfasserin |4 aut | |
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