A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios
Power amplifiers applied in modern active electronically scanned array (AESA) radars and 5G radios should have similar features, especially in terms of phase distortion, which dramatically affects the spectral regrowth and, moreover, they are difficult to be compensated by predistortion algorithms. This paper presents a GaN-based power amplifier design with a reduced level of transmittance distortions, varying in time, without significantly worsening other key features such as output power, efficiency and gain. The test amplifier with GaN-on-Si high electron mobility transistors (HEMT) NPT2018 from MACOM provides more than 17 W of output power at the 62% PAE over a 1.0 GHz to 1.1 GHz frequency range. By applying a proposed design approach, it was possible to decrease phase changes on test pulses from 0.5° to 0.2° and amplitude variation from 0.8 dB to 0.2 dB during the pulse width of 40 µs and 40% duty cycle.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:11 |
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| Enthalten in: |
Micromachines - 11(2020), 4 vom: 10. Apr. |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Kuchta, Dawid [VerfasserIn] |
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| Links: |
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| Themen: |
AESA radars |
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| Anmerkungen: |
Date Revised 28.09.2020 published: Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.3390/mi11040398 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM308752325 |
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| 520 | |a Power amplifiers applied in modern active electronically scanned array (AESA) radars and 5G radios should have similar features, especially in terms of phase distortion, which dramatically affects the spectral regrowth and, moreover, they are difficult to be compensated by predistortion algorithms. This paper presents a GaN-based power amplifier design with a reduced level of transmittance distortions, varying in time, without significantly worsening other key features such as output power, efficiency and gain. The test amplifier with GaN-on-Si high electron mobility transistors (HEMT) NPT2018 from MACOM provides more than 17 W of output power at the 62% PAE over a 1.0 GHz to 1.1 GHz frequency range. By applying a proposed design approach, it was possible to decrease phase changes on test pulses from 0.5° to 0.2° and amplitude variation from 0.8 dB to 0.2 dB during the pulse width of 40 µs and 40% duty cycle | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a AESA radars | |
| 650 | 4 | |a GaN 5G | |
| 650 | 4 | |a RF front-end | |
| 650 | 4 | |a distortions | |
| 650 | 4 | |a high electron mobility transistors (HEMT) | |
| 650 | 4 | |a new radio | |
| 650 | 4 | |a optimization | |
| 650 | 4 | |a power amplifier | |
| 650 | 4 | |a transmittance | |
| 700 | 1 | |a Gryglewski, Daniel |e verfasserin |4 aut | |
| 700 | 1 | |a Wojtasiak, Wojciech |e verfasserin |4 aut | |
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