Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga2O3 MESFETs with Graphene-Gate Architectures and Their Logic Applications
Ultrawide band gap (UWBG) β-Ga2O3 is a promising material for next-generation power electronic devices. An enhancement-mode (E-mode) device is essential for designing power conversion systems with simplified circuitry and minimal loss. The integration of an E-mode field-effect transistor (FET) with a depletion-mode (D-mode) FET can build a high-performance logic circuit. In this study, we first demonstrated the realization of an E-mode quasi-two-dimensional (quasi-2D) β-Ga2O3 FET with a novel graphene gate architecture via a van der Waals heterojunction. Then, we monolithically integrated it with a D-mode quasi-2D β-Ga2O3 FET, achieving an area-efficient logic circuit. The threshold voltage of the n-channel UWBG β-Ga2O3 material was controlled by forming a novel architecture of a double-gate graphene/β-Ga2O3 heterojunction, where both graphene and β-Ga2O3 were obtained by a mechanical exfoliation method. The fabricated double graphene-gate β-Ga2O3 metal-semiconductor FET (MESFET) was operated in the E-mode with a positive threshold voltage of +0.25 V, which is approximately 1.2 V higher than that of a single-gate D-mode β-Ga2O3 MESFET. Both E-/D-modes β-Ga2O3 MESFETs showed excellent electrical characteristics with a subthreshold swing of 68.9 and 84.6 mV/dec, respectively, and a high on/off current ratio of approximately 107. A β-Ga2O3 logic inverter composed of E-/D-mode β-Ga2O3 devices exhibited desired inversion characteristics. The monolithic integration of an E-/D-mode quasi-2D FET with an UWBG channel layer can pave the way for various applications in smart and robust power (nano) electronics.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:12 |
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| Enthalten in: |
ACS applied materials & interfaces - 12(2020), 6 vom: 12. Feb., Seite 7310-7316 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Kim, Janghyuk [VerfasserIn] |
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| Links: |
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| Themen: |
Depletion-mode FET |
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| Anmerkungen: |
Date Revised 13.02.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acsami.9b19667 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM304980390 |
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| LEADER | 01000naa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM304980390 | ||
| 003 | DE-627 | ||
| 005 | 20231225120146.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 231225s2020 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1021/acsami.9b19667 |2 doi | |
| 028 | 5 | 2 | |a pubmed24n1016.xml |
| 035 | |a (DE-627)NLM304980390 | ||
| 035 | |a (NLM)31898449 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Kim, Janghyuk |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga2O3 MESFETs with Graphene-Gate Architectures and Their Logic Applications |
| 264 | 1 | |c 2020 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Revised 13.02.2020 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Ultrawide band gap (UWBG) β-Ga2O3 is a promising material for next-generation power electronic devices. An enhancement-mode (E-mode) device is essential for designing power conversion systems with simplified circuitry and minimal loss. The integration of an E-mode field-effect transistor (FET) with a depletion-mode (D-mode) FET can build a high-performance logic circuit. In this study, we first demonstrated the realization of an E-mode quasi-two-dimensional (quasi-2D) β-Ga2O3 FET with a novel graphene gate architecture via a van der Waals heterojunction. Then, we monolithically integrated it with a D-mode quasi-2D β-Ga2O3 FET, achieving an area-efficient logic circuit. The threshold voltage of the n-channel UWBG β-Ga2O3 material was controlled by forming a novel architecture of a double-gate graphene/β-Ga2O3 heterojunction, where both graphene and β-Ga2O3 were obtained by a mechanical exfoliation method. The fabricated double graphene-gate β-Ga2O3 metal-semiconductor FET (MESFET) was operated in the E-mode with a positive threshold voltage of +0.25 V, which is approximately 1.2 V higher than that of a single-gate D-mode β-Ga2O3 MESFET. Both E-/D-modes β-Ga2O3 MESFETs showed excellent electrical characteristics with a subthreshold swing of 68.9 and 84.6 mV/dec, respectively, and a high on/off current ratio of approximately 107. A β-Ga2O3 logic inverter composed of E-/D-mode β-Ga2O3 devices exhibited desired inversion characteristics. The monolithic integration of an E-/D-mode quasi-2D FET with an UWBG channel layer can pave the way for various applications in smart and robust power (nano) electronics | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a depletion-mode FET | |
| 650 | 4 | |a enhancement-mode FET | |
| 650 | 4 | |a gallium oxide | |
| 650 | 4 | |a two-dimensional material | |
| 650 | 4 | |a ultrawide band gap | |
| 700 | 1 | |a Kim, Jihyun |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t ACS applied materials & interfaces |d 2009 |g 12(2020), 6 vom: 12. Feb., Seite 7310-7316 |w (DE-627)NLM194100049 |x 1944-8252 |7 nnns |
| 773 | 1 | 8 | |g volume:12 |g year:2020 |g number:6 |g day:12 |g month:02 |g pages:7310-7316 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1021/acsami.9b19667 |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 12 |j 2020 |e 6 |b 12 |c 02 |h 7310-7316 | ||