Air-Stable Thin Films with High and Anisotropic Electrical Conductivities Composed of a Carbon-Centered Neutral π-Radical
Copyright © 2019 American Chemical Society..
Air-stable thin films (50-720 nm thickness) composed of a carbon-centered neutral π-radical with high and anisotropic electrical conductivities were fabricated by vapor deposition of 4,8,12-trioxotriangulene (TOT). The thin films were air-stable over 15 months and were the aggregate of TOT microcrystals, in which a one-dimensional π-stacking column was formed through the strong singly occupied molecular orbital (SOMO)-SOMO interaction with two-electron-multicenter bond among the spin-delocalized π-planes. The orientations of the one-dimensional column of TOT were changed depending on the deposition rate and substrates, where face-on-oriented thin films were epitaxially grown on the graphite 0001 surface, and edge-on-oriented thin films were grown on glass, SiO2, and indium tin oxide substrates under a high-deposition rate condition. The films showed high electrical conductivities of 2.5 × 10-2 and 5.9 × 10-5 S cm-1 along and perpendicular to the π-stacking column, respectively, for an edge-on oriented thin film.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2019 |
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| Erschienen: |
2019 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:4 |
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| Enthalten in: |
ACS omega - 4(2019), 17 vom: 22. Okt., Seite 17569-17575 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Ito, Hiroshi [VerfasserIn] |
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| Anmerkungen: |
Date Revised 14.10.2023 published: Electronic-eCollection Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acsomega.9b02700 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM302616853 |
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| 500 | |a published: Electronic-eCollection | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Copyright © 2019 American Chemical Society. | ||
| 520 | |a Air-stable thin films (50-720 nm thickness) composed of a carbon-centered neutral π-radical with high and anisotropic electrical conductivities were fabricated by vapor deposition of 4,8,12-trioxotriangulene (TOT). The thin films were air-stable over 15 months and were the aggregate of TOT microcrystals, in which a one-dimensional π-stacking column was formed through the strong singly occupied molecular orbital (SOMO)-SOMO interaction with two-electron-multicenter bond among the spin-delocalized π-planes. The orientations of the one-dimensional column of TOT were changed depending on the deposition rate and substrates, where face-on-oriented thin films were epitaxially grown on the graphite 0001 surface, and edge-on-oriented thin films were grown on glass, SiO2, and indium tin oxide substrates under a high-deposition rate condition. The films showed high electrical conductivities of 2.5 × 10-2 and 5.9 × 10-5 S cm-1 along and perpendicular to the π-stacking column, respectively, for an edge-on oriented thin film | ||
| 650 | 4 | |a Journal Article | |
| 700 | 1 | |a Murata, Tsuyoshi |e verfasserin |4 aut | |
| 700 | 1 | |a Miyata, Takahiro |e verfasserin |4 aut | |
| 700 | 1 | |a Morita, Miwa |e verfasserin |4 aut | |
| 700 | 1 | |a Tsuji, Ryotaro |e verfasserin |4 aut | |
| 700 | 1 | |a Morita, Yasushi |e verfasserin |4 aut | |
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