Understanding phase-change behaviors of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application
Phase-change materials are highly promising for next-generation nonvolatile data storage technology. The pronounced effects of C doping on structural and electrical phase-change behaviors of Ge2Sb2Te5 material are investigated at the atomic level by combining experiments and ab initio molecular dynamics. C dopants are found to fundamentally affect the amorphous structure of Ge2Sb2Te5 by altering the local environments of Ge-Te tetrahedral units with stable C-C chains. The incorporated C increases the amorphous stability due to the enhanced covalent nature of the material with larger tetrahedral Ge sites. The four-membered rings with alternating atoms are reduced greatly with carbon addition, leading to sluggish phase transition and confined crystal grains. The lower RESET power is presented in the PCM cells with carbon-doped material, benefiting from its high resistivity and low thermal conductivity.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2014 |
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| Erschienen: |
2014 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:6 |
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| Enthalten in: |
ACS applied materials & interfaces - 6(2014), 16 vom: 27. Aug., Seite 14207-14 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Zhou, Xilin [VerfasserIn] |
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| Anmerkungen: |
Date Completed 07.04.2015 Date Revised 27.08.2014 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/am503502q |
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| funding: |
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| Förderinstitution / Projekttitel: |
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NLM240685253 |
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| 245 | 1 | 0 | |a Understanding phase-change behaviors of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application |
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| 500 | |a Date Revised 27.08.2014 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Phase-change materials are highly promising for next-generation nonvolatile data storage technology. The pronounced effects of C doping on structural and electrical phase-change behaviors of Ge2Sb2Te5 material are investigated at the atomic level by combining experiments and ab initio molecular dynamics. C dopants are found to fundamentally affect the amorphous structure of Ge2Sb2Te5 by altering the local environments of Ge-Te tetrahedral units with stable C-C chains. The incorporated C increases the amorphous stability due to the enhanced covalent nature of the material with larger tetrahedral Ge sites. The four-membered rings with alternating atoms are reduced greatly with carbon addition, leading to sluggish phase transition and confined crystal grains. The lower RESET power is presented in the PCM cells with carbon-doped material, benefiting from its high resistivity and low thermal conductivity | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a Research Support, Non-U.S. Gov't | |
| 700 | 1 | |a Xia, Mengjiao |e verfasserin |4 aut | |
| 700 | 1 | |a Rao, Feng |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Liangcai |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Xianbin |e verfasserin |4 aut | |
| 700 | 1 | |a Song, Zhitang |e verfasserin |4 aut | |
| 700 | 1 | |a Feng, Songlin |e verfasserin |4 aut | |
| 700 | 1 | |a Sun, Hongbo |e verfasserin |4 aut | |
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